Khurshid Boltaev

Scopus Publications

Analyzing the Change in the Composition of a CdTe Surface upon Implanting Ions and Subsequent Annealing
A. A. Abduvayitov, Kh. Kh. Boltaev, B. E. Umirzakov, D. A. Tashmukhamedova, and G. Abdurakhmanov
Pleiades Publishing Ltd

ANALYSIS OF THE CHANGE IN THE COMPOSITION OF THE CdTe SURFACE UPON IMPLANTATION OF (Formula present) IONS AND SUBSEQUENT ANNEALING
A.A. Abduvaitov, , G.T. Imanova, and
Jomard Publishing
The methods of implantation of О_2^+ ions into a single-crystal CdTe/Mo(111) film followed by annealing at Т=800 K for 30 min resulted in the obtained CdTeO3 film. Ion implantation, heating, and investigation of the composition, density of state of valence electrons, and parameters of energy bands are carried out in the same ultra-high vacuum device (10-7 Pa). The surface morphology and crystal structure of the oxide are studied using standard scanning electron microscopy and high-speed electron diffraction setups. It has been established that in the valence band of the CdTeO3 film there is a 3rd maximum due to the excitation of electrons from 5s Cd electrons and 2p O electrons and bending 5s Cd + 2pO electrons. Based on the Eg data, it is concluded that quantum size effects are not detected in the case of CdTeO3 films with a thickness of ≥ 30 Å.

Injectivity and Nuclearity Properties for Real C*-Algebras
A. A. Rakhimov, M. E. Nurillaev, and Kh.Kh. Boltaev
Springer Science and Business Media LLC

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF<inf>2</inf>
Akbarjon Аbduvayitov, Gunel Imanova, Dilnoza Tashmukhamedova, Khurshid Boltaev, and Boltakhodja Umirzakov
Scientific Journals Publishing House
Relevance. In the case of bombardment with Mg metal ions, the changes are accompanied by the introduction of metal atoms and the formation of various types of compounds. Thus, CdF2 is intensively decomposed into components in the near-surface layer in the process of ion implantation. A small part of these components can be sprayed from the surface. Due to the high chemical activity, almost all of the liberated fluorine atoms again enter into a chemical bond with both the atoms of the alloying element and the atoms of cadmium. Consequently, three-component compounds are formed in the near-surface layer. Therefore, it is necessary to define the electronic states, band energy, and optical parameters of CdF2 and Cd0.6Mg0.4F2 films. Purpose. The composition, structure, and properties of CdF2 implanted with Mg+ ions in combination with thermal and laser annealing for the first time were the research aims. Methodology. The experimental studies were carried out at a vacuum of at least 10-7 Pa using the methods of Auger electron spectroscopy (AES) and ultraviolet photoelectron spectroscopy (UVES). The depth distribution profiles of atoms were determined by the AES method in combination with layer-by-layer etching of the surface with Ar+ ions with E0=2-3 keV. Results. CdF2 is intensively decomposed into components in the near-surface layer in the process of ion implantation. Consequently, three-component compounds are formed in the near-surface layer. Band-energy parameters and densities of the state of electrons in the valence band of this film are determined. Conclusions. The effect of the implantation of Mg+ ions on the composition and electronic structure of single-crystal CdF2/Si(III) films was studied for the first time. The densities of electronic states, band-energy and optical parameters of CdF2 and Cd0.6Mg0.4F2 films have been determined

Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface
A. A. Abduvayitov, Kh. Kh. Boltaev, and G. A. Rozikov
Pleiades Publishing Ltd

Composition and Structure of Ga<inf>1 – x</inf>Na<inf>x</inf>As Nanolayers Produced near the GaAs Surface by Na+ Implantation
Kh. Kh. Boltaev, Zh. Sh. Sodikjanov, D. A. Tashmukhamedova, and B. E. Umirzakov
Pleiades Publishing Ltd

Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface
A. A. Abduvaiitov and Kh. Kh. Boltaev
Pleiades Publishing Ltd

Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures
B. E. Umirzakov, S. J. Nimatov, and H. H. Boltaev
Pleiades Publishing Ltd

Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing
Kh. Kh. Boltaev, D. A. Tashmukhamedova, and B. E. Umirzakov
Pleiades Publishing Ltd

Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF<inf>2</inf> surface layers using low-energy ion implantation
B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, and Kh. Kh. Boltaev
Pleiades Publishing Ltd