Prof. Daniel ARAUJO is Dr. in Science and physicist of the EPFL Switzerland, (PhD in 1992). Nowadays, he is Full Professor at University of Cadiz (Spain, since 2010) in the Department of Material Science and Engineering and at the Lyon Institute of Technology (INSA-Lyon, France, since 2004, presently in détachement). His activity is actually focused on two different topics: (i) aerospace materials in collaboration with Airbus and FIDAMC (Foundation for Research, Development and Application of Composite Materials), (ii) Homoepitaxial diamond for power devices. In the latter, he is responsible of H2020 and national projects. He has been supervisor of 11 doctoral theses and is author of more than 140 JCR publications and 16 invited/plenary conferences.
EDUCATION
1-. Universidad de Cádiz: Cadiz, Andalucía, ES
1993-01-01 hasta 1994-12-01 | (Ciencias de los Materiales Ingeniería Metalúrgica y Química Inorgánica)
2-. IBM Zurich Research Laboratory: Zurich, Zürich, CH
1992-08-01 hasta 1993-02-01Education
3-. École Polytechnique Fédérale de Lausanne: Lausanne, VD, CH
1988-10-01 hasta 1992-09-30 | (Instituto de micro-optoelectrónica (IMO)
4-. Ecoles du canton de Vaud: Lausanne, Cantón de Vaud, CH
1982-01-01 hasta 1988-01-01 |
5-. École Polytechnique Fédérale de Lausanne: Lausanne, VD, CH
1982-10-01 hasta 1987-06-01 |
Smart Cut Transfer of Wide-Bandgap Materials: The Case of Diamond Julie Widiez, Jérémie Chrétien, Cédric Masante, Pierrick Gilles, Jose Carlo Piñero, et al. Physica Status Solidi A Applications and Materials Science, 2026 Diamond exhibits a unique combination of exceptional properties, making it a highly attractive material for advanced technologies. Yet, these outstanding characteristics come at a cost: Diamond remains difficult to fabricate and is not readily available in large formats. In this context, the well‐known Smart Cut layer transfer process—based on ion implantation and annealing—has been adapted for the first time to diamond. Turning a limitation into an advantage, the metastable nature of diamond allows for reducing the thermal budget required for cleavage. By finely tuning the implantation conditions, a buried sp 2 ‐rich layer can be created to serve as a fracture plane. Using this method, we successfully transfer an ~800‐nm‐thick diamond film onto a silicon substrate via metal bonding. After plasma etching of the residual sp 2 ‐rich layer, the transferred diamond preserves good crystalline quality, as confirmed by transmission electronic microscopy (TEM), electron energy loss spectroscopy (EELS), nanobeam diffraction, and Raman spectroscopy. While some implantation‐induced point defects remain, they may be mitigated by a post‐transfer annealing step. These results show that Smart Cut can be extended to ultrahard and chemically inert materials like diamond. This opens new perspectives for cost‐effective, epi‐ready diamond substrates on engineered hosts, paving the way for future high‐performance electronics and quantum technologies.
Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC Yamina Benamra, Laurent Auvray, Jérôme Andrieux, François Cauwet, Marina Gutierrez, et al. Crystal Growth and Design, 2025 Heteroepitaxial boron carbide (BxC) can be grown on Si face 4H-SiC(0001) using a two-step process involving substrate boridation at 1200$^\\circ$C under BCl3 + H2 followed by a chemical vapor deposition (CVD) growth step at 1600$^\\circ$C by adding C3H8 precursor. However, in-depth investigation of the early growth stages revealed that complex reactions occur before starting the CVD at high temperature. Indeed, after boridation, the 35 nm BxC buffer layer is covered by an amorphous B-containing layer which evolves and reacts during the temperature ramp up between 1200 to 1600$^\\circ$C. Despite the formation of new phases (Si, SiB6), which could be explained by significant solid-state diffusion of Si, C and B elements through the thin BxC layer, the CVD epitaxial re-growth upon reaching 1600$^\\circ$C does not seems to be affected by these phases. The resulting single crystalline BxC layers display the epitaxial relationships [1010]BxC(0001)||[1010]4H-SiC(0001). The layers exhibit a B4C composition, e.g. the highest possible C content for the BxC solid solution.
On the Piezoelectric Properties of Zinc Oxide Thin Films Synthesized by Plasma Assisted DC Sputter Deposition Michael McKinlay, Lewis Fleming, Manuel Pelayo García, Lucía Nieto Sierra, Pilar Villar Castro, et al. Advanced Materials Interfaces, 2024 This work presents a study of piezoelectric zinc oxide (ZnO) thin films deposited by a novel post‐reactive sputtering method. The process utilizes a rotating drum with DC magnetron sputtering deposition onto substrates with subsequent DC plasma‐assisted oxidation of the deposited metal to metal oxide. The paper analyzes the influence of plasmaassisted magnetron sputtering (PA‐MS) deposition parameters (O2 plasma source power, O2 flow, and Ar flow) on the morphological, structural, optical, and piezoelectric properties of ZnO thin films. Design of experiments has been utilized to evaluate the role of these parameters on the growth rate (rg) and the properties of resulting films. Results indicate a predominant influence of the plasma power on the rg over other parameters. Among the eight tested samples, three of them show high crystal quality with high intensity (0001) diffraction peak, characteristic of the wurtzite crystalline structure of ZnO, and one of them exhibits piezoelectric coefficient values of ≈11pC N−1. That sample corresponding to a ZnO film deposited at the lowest rg of 0.075 nm s−1, confirmed the key role of the deposition parameters on the piezoelectric response of films, and demonstrated PA‐MS as a promising technique to produce high‐quality piezoelectric thin films.
Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study J Valendolf, J C Piñero, F Lloret, G Alba, D Eon, et al. Nanotechnology, 2024 Due to its capacity to achieve nanometre-scale machining and lithography, a focused ion beam (FIB) is an extended tool for semiconductor device fabrication and development, in particular, for diamond-based devices. However, some technological steps are still not fully optimized for its use. Indeed, ion implantation seems to affect the crystalline structure and electrical properties of diamond. For this study, a boron-doped ([B] ∼ 1017 atoms·cm−3) diamond layer grown by chemical vapour deposition was irradiated using Ga+ by FIB, with 1 nA current and 5, 20, and 30 keV of acceleration voltage. The Ga+ implanted diamond layer has been analysed through cathodoluminescence (CL) and scanning transmission electron microscopy (STEM)-related techniques. The beam penetration depth has been simulated by Monte Carlo calculations of both Ga+ (FIB) and e− (CL) beams at different energies. The comparative CL analysis of the layer as-grown and after implantation revealed peaks related to defects, such as A band, H3 centre, and defects present in the green band region. The STEM studies for the 30 keV implanted sample showed that the diamond lattice is affected by the damage, evidencing amorphisation in the layer with a sp2/sp3 ratio of 1.37, estimated by electron energy loss spectroscopy. Therefore, this study highlights the effects of the Ga+ implantation on the optical and structural characteristics of diamond, using different methods.
Semi-empirical model for Impurity-to-Band energy reduction in semiconducting boron-doped diamond G Alba, D Araujo Diamond and Related Materials, 113645 , 2026 2026
Semi-empirical model for Impurity-to-Band energy reduction in semiconducting boron-doped diamond G Alba Muñoz, D Araújo Gay Elsevier , 2026 2026
Economic Production and Supernatural Beliefs: Evidence from Pastoral Societies in Africa D Araujo, B Carrillo, B Sampaio Available at SSRN 6446593 , 2026 2026
Long-Term Effects of a Commodity Boom: Rubber Slavery in the Amazon D Araujo, H Laudares, D Murillo, H Paredes, F Valencia Caicedo 2026
Enhancing Situational Awareness in Public Safety with Frame-Accumulated Face Recognition and Distance-Based P Lira, K Costa, S Loss, L Lima, D Araújo, E Nogueira, AR Neto, T Batista, ... Intelligent Systems: 35th Brazilian Conference, BRACIS 2025, Fortaleza-CE … , 2026 2026 Citations: 1
Ohmic contacts on (111)-oriented phosphorus-doped diamond fabricated by FIB transformation and surface Ga plus implantation G Pena, F Lloret, J Millan-Barba, AF De Rivas, G Alba, M Suzuki, ... DIAMOND AND RELATED MATERIALS 162 , 2026 2026
Improving Legislative Accessibility with Retrieval-Augmented Generation SC da Cunha Lima, D Araújo Intelligent Systems: 35th Brazilian Conference, BRACIS 2025, Fortaleza-CE … , 2026 2026
Smart Cut Transfer of Wide‐Bandgap Materials: The Case of Diamond J Widiez, J Chrétien, C Masante, P Gilles, JC Pinero, F Milesi, ... physica status solidi (a) 223 (2), e202500443 , 2026 2026 Citations: 2
Enhancing Situational Awareness in Public Safety with Frame-Accumulated Face Recognition and Distance-Based Evaluation P Lira, K Costa, S Loss, L Lima, D Araújo, E Nogueira, AR Neto, T Batista, ... Brazilian Conference on Intelligent Systems, 245-259 , 2025 2025
Improving Legislative Accessibility with Retrieval-Augmented Generation SCC Lima, D Araújo Brazilian Conference on Intelligent Systems, 245-259 , 2025 2025
Retraction notice to “FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier”[Appl. Surf. Sci. 674 … J Valendolf, D Leinen, G Alba, F Lloret, JC Pinero, M Suzuki, D Araujo Applied Surface Science 703, 163051 , 2025 2025
Enhancing Public Safety Situational Awareness Using Edge Intelligence P Lira, S Loss, K Costa, D Araújo, AR Neto, N Cacho, T Batista, ... WiPiEC Journal-Works in Progress in Embedded Computing Journal 11 (1), 4-4 , 2025 2025
Study of dislocation propagation in (113)-oriented diamond films R Mesples-Carrere, M del Pilar Villar, G Alba, R Issaoui, D Araujo, ... 18th international conference on new diamond and nano carbons-NDNC 2025 , 2025 2025
Minimum Wages and the Human Capital of the Next Generation B Carrillo, B Sampaio, D Araujo, W Iglesias Available at SSRN 5287613 , 2025 2025
Mechanism of heteroepitaxial growth of Boron carbide on the Si-Face of 4H-SiC Y Benamra, L Auvray, J Andrieux, F Cauwet, M Gutierrez, F Lloret, ... Crystal Growth & Design 25 (5), 1506-1513 , 2025 2025 Citations: 1
Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study JC Piñero, D Fernández, F Lloret, L Le Van-Jodin, J Chretien, C Masanté, ... Applied Surface Science 681, 161570 , 2025 2025 Citations: 7
Systematic approach for high piezoelectric AlN deposition LN Sierra, F Lloret, JJ Gallardo, CG Nunez, MP Garcia, G Alba, D Gibson, ... Journal of Alloys and Compounds 1008, 176723 , 2024 2024 Citations: 8
RETRACTED: FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier J Valendolf, D Leinen, G Alba, F Lloret, JC Pinero, M Suzuki, D Araujo Applied Surface Science 674, 160909 , 2024 2024 Citations: 5
On the piezoelectric properties of zinc oxide thin films synthesized by plasma assisted DC sputter deposition M McKinlay, L Fleming, MP García, LN Sierra, PV Castro, D Araujo, ... Advanced Materials Interfaces 11 (32), 2400252 , 2024 2024 Citations: 7
Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study JC Piñero Charlo, D Fernández de los Reyes, FM Lloret Vieira, ... Elsevier , 2024 2024
MOST CITED SCHOLAR PUBLICATIONS
Diamond for electronics: Materials, processing and devices D Araujo, M Suzuki, F Lloret, G Alba, P Villar Materials 14 (22), 7081 , 2021 2021 Citations: 114
Microstructural study of CO2 laser machined heat affected zone of 2024 aluminum alloy D Araujo, FJ Carpio, D Mendez, AJ Garcıa, MP Villar, R Garcıa, ... Applied surface science 208, 210-217 , 2003 2003 Citations: 96
Design of InGaAs linear graded buffer structures A Sacedon, F González‐Sanz, E Calleja, E Munoz, SI Molina, FJ Pacheco, ... Applied physics letters 66 (24), 3334-3336 , 1995 1995 Citations: 87
Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators JG Rodríguez-Madrid, GF Iriarte, D Araujo, MP Villar, OA Williams, ... Materials Letters 66 (1), 339-342 , 2012 2012 Citations: 79
A model for the Zn diffusion in GaAs by a photoluminescence study NH Ky, L Pavesi, D Araujo, JD Ganiere, FK Reinhart Journal of applied physics 69 (11), 7585-7593 , 1991 1991 Citations: 78
Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective J Navas, D Araujo, JC Piñero, A Sánchez-Coronilla, E Blanco, P Villar, ... Applied Surface Science 433, 408-418 , 2018 2018 Citations: 76
The cost-effectiveness of homecare services for adults and older adults: a systematic review C Curioni, AC Silva, J Damião, A Castro, M Huang, T Barroso, D Araujo, ... International journal of environmental research and public health 20 (4), 3373 , 2023 2023 Citations: 74
Diamond/γ-alumina band offset determination by XPS J Cañas, G Alba, D Leinen, F Lloret, M Gutierrez, D Eon, J Pernot, ... Applied Surface Science 535, 146301 , 2021 2021 Citations: 52
Hole transport in boron delta-doped diamond structures G Chicot, TN Tran Thi, A Fiori, F Jomard, E Gheeraert, E Bustarret, ... Applied Physics Letters 101 (16) , 2012 2012 Citations: 50
Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation‐free (<10 5 cm −2 ) and unstrained epilayers SI Molina, FJ Pacheco, D Araujo, R Garcia, A Sacedon, E Calleja, Z Yang, ... Applied physics letters 65 (19), 2460-2462 , 1994 1994 Citations: 50
First Brazilian guidelines for familial hypercholesterolemia RD Santos, ACM Gagliardi, HT Xavier, A Casella Filho, DB Araújo, ... Arquivos brasileiros de cardiologia 99 (2 Suppl 2), 1-28 , 2012 2012 Citations: 47
Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence JP Garayt, JM Gerard, F Enjalbert, L Ferlazzo, S Founta, ... Physica E: Low-dimensional Systems and Nanostructures 26 (1-4), 203-206 , 2005 2005 Citations: 47
A critical examination of the possible application of zinc stable isotope ratios in bivalve mollusks and suspended particulate matter to trace zinc pollution in a tropical estuary D Araújo, W Machado, D Weiss, DS Mulholland, GR Boaventura, J Viers, ... Environmental Pollution 226, 41-47 , 2017 2017 Citations: 45
Critical boron-doping levels for generation of dislocations in synthetic diamond MP Alegre, D Araujo, A Fiori, JC Pinero, F Lloret, MP Villar, P Achatz, ... Applied Physics Letters 105 (17) , 2014 2014 Citations: 45
Fatigue behaviour of laser machined 2024 T3 aeronautic aluminium alloy FJ Carpio, D Araújo, FJ Pacheco, D Méndez, AJ Garcı́a, MP Villar, ... Applied Surface Science 208, 194-198 , 2003 2003 Citations: 44
Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers R Rouzbahani, SS Nicley, DEP Vanpoucke, F Lloret, P Pobedinskas, ... Carbon 172, 463-473 , 2021 2021 Citations: 42
Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures G Chicot, A Fiori, PN Volpe, TN Tran Thi, JC Gerbedoen, J Bousquet, ... Journal of Applied Physics 116 (8) , 2014 2014 Citations: 41
Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy JG Lozano, AM Sánchez, R García, D González, D Araújo, S Ruffenach, ... Applied Physics Letters 87 (26) , 2005 2005 Citations: 40
Cathodoluminescence study of the spatial distribution of electron‐hole pairs generated by an electron beam in Al 0.4 Ga 0.6 As JM Bonard, JD Ganière, B Akamatsu, D Araújo, FK Reinhart Journal of applied physics 79 (11), 8693-8703 , 1996 1996 Citations: 40
Self‐interstitial mechanism for Zn diffusion‐induced disordering of GaAs/Al x Ga 1− x As ( x =0.1−1) multiple‐quantum‐well structures NH Ky, JD Ganiere, M Gailhanou, B Blanchard, L Pavesi, G Burri, ... Journal of applied physics 73 (8), 3769-3781 , 1993 1993 Citations: 40
GRANT DETAILS
1-. Nuevas aleaciones de carbono semiconductoras para una nueva generación de dispositivos electrónicos (CARBOTRONICS-PUENTE)
Universidad de Cádiz (Puerto Real, Cádiz)2020-04 hasta 2021-03|
GRANT_NUMBER: Ref: FEDER-UCA18-106470
2-. Composite de Fibra de carbono (CFRP) conductor térmico y eléctrico por percolación de nano-diamantes (Carbo-Diam)
Junta de Andalucía (Sevilla, Andalucia)2020-02 hasta 2022-01|
GRANT_NUMBER: sol-201800107851-tra
3-. Composite de Fibra de carbono (CFRP) conductor térmico y eléctrico por percolación de nano-diamantes (Carbo-Diam)
Consejería de Economía y Conocimiento. Junta de Andalucía (Sevialla, Andalucía)2019-12 hasta 2022-12|
GRANT_NUMBER: Ref: FDER-UCA-18-107851
4-. Nuevas aleaciones de carbono semiconductoras para una nueva generación de dispositivos electrónicos (CARBOTRONICS-PUENTE)
Consejería de Economía y Conocimeinto. Junta de Andalucía (Sevilla, Andalucía)2019-12 hasta 2021|
GRANT_NUMBER: Ref: FEDER-UCA-18-106586
5-. Fibras de carbono recubiertas de diamante, la nueva generación de composites (CFRP)
Ministerio de Ciencia e Innovación (Cádiz, Andalucía)2018-11 hasta 2020-10|
GRANT_NUMBER: ESP2017 91820 EXP
6-. Architectura 3D de mosfet elaborada in-situ por MPCVD para electrónica de potencia
Ministerio de Economía, Industria y Competitividad, Gobierno de España (Cádiz, Andalucía)2018-01 hasta 2020-12|
GRANT_NUMBER: TEC2017-86347-C2-1-R
7-. Mejora de las prestaciones del laboratorio de preparación de muestras para microscopías (LPM) de los servicios centrales de investigación científica y tecnológica de la universidad de cádiz
Unión Europea (Cádiz, Andalucía)2016-01 hasta 2017-12|Adjudicación
GRANT_NUMBER: UNCA15-CE3256
8-. Green electronics with diamond power devices
European Commission Horizon 2020 (Cádiz, Andalucía)2015-05 hasta 2019-04|Adjudicación
GRANT_NUMBER: SEP-2010-039524
INDUSTRY EXPERIENCE
1-. IBM research center : Zürich, Cantón de Zürich, CH
1992-09-15 hasta 1993-01-15 | Researcher (IBM research center)Employment
2-. Nestec S.A.: Lausanne, Cantón de Vaud, CH
1986-09-02 hasta 1987-08-31 | Researcher (Physics Department)Employment
