Ahmet

Verified @unec.edu.az

RESEARCH, TEACHING, or OTHER INTERESTS

Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Science

21

Scholar Citations

2

Scholar h-index

1

Scholar i10-index

RECENT SCHOLAR PUBLICATIONS

  • Synthesis and Investigation of Structural and Optical Properties of Nitrogen-doped Carbon Quantum Dots
    B Emdadi, A Asimov
    Integrated Ferroelectrics 240 (1), 175-180 2024

  • Structural and Optical Properties of PEDOT: PSS
    B Emdadi, A Asimov
    Integrated Ferroelectrics 237 (1), 125-132 2023

  • The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode
    A Asimov, M Ahmetoğlu, A Kirsoy, M zer, M Yasin
    Journal of Nanoelectronics and Optoelectronics 11 (2), 214-218 2016

  • The Electrical Properties Of Au/Meh-ppv:pcbm/n-Type Gaas Schottky Barrier Diode.
    BK M. Ahmetoglu (Afrailov), A. Kirsoy, A. Asimov
    Optoelectronics And Advanced Materials – Rapid Communications 10 (No. 11-12 2016

  • The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode
    BK A. Kırsoy, M. Ahmetoglu (Afrailov), A. Asimov
    ACTA PHYSICA POLONICA A 128 (No 2), 4 2015

  • Gaussian distribution of inhomogeneous barrier height in Au/n-GaP (100) Schottky barrier diodes
    M zer, T Gzel, A Asimov, M Ahmetoglu
    Journal of Optoelectronics and Advanced Materials 16 (May-June 2014), 606-611 2014

  • Electrical characteristics of Al/n-type GaAs Schottky barrier diodes at room temperature
    A Asimov, M Ahmetoglu, B Kucur, I Gucuyener
    Optoelectronics and Advanced Materials-Rapid Communications 8 (March-April 2014

  • The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics
    A Asimov
    Optoelectronics and Advanced Materials, Rapid Communications 8 2014

  • The determination of series resistance and interface state density distributions of Au/p-type GaAs Schottky barrier diodes
    TG A Asimov, M AHMETOGLU, B Kucur, M ZER
    Optoelectronics and Advanced Materials-Rapid Communications 7 (July-August 2013

  • The analysis of series resistance and interface state density distributions of Au/TiO {sub 2}/n-Si metal-insulator-semiconductor structures at room temperature
    S Murat, A Ahmet, H Elchin
    Fizika (Baku) 19 2013

MOST CITED SCHOLAR PUBLICATIONS

  • The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode
    BK A. Kırsoy, M. Ahmetoglu (Afrailov), A. Asimov
    ACTA PHYSICA POLONICA A 128 (No 2), 4 2015
    Citations: 13

  • Gaussian distribution of inhomogeneous barrier height in Au/n-GaP (100) Schottky barrier diodes
    M zer, T Gzel, A Asimov, M Ahmetoglu
    Journal of Optoelectronics and Advanced Materials 16 (May-June 2014), 606-611 2014
    Citations: 3

  • Electrical characteristics of Al/n-type GaAs Schottky barrier diodes at room temperature
    A Asimov, M Ahmetoglu, B Kucur, I Gucuyener
    Optoelectronics and Advanced Materials-Rapid Communications 8 (March-April 2014
    Citations: 2

  • The Electrical Properties Of Au/Meh-ppv:pcbm/n-Type Gaas Schottky Barrier Diode.
    BK M. Ahmetoglu (Afrailov), A. Kirsoy, A. Asimov
    Optoelectronics And Advanced Materials – Rapid Communications 10 (No. 11-12 2016
    Citations: 1

  • The determination of electronic parameters of Al/MDMO-PPV/p-Si/Al Schottky diode by current-voltage characteristics
    A Asimov
    Optoelectronics and Advanced Materials, Rapid Communications 8 2014
    Citations: 1

  • The determination of series resistance and interface state density distributions of Au/p-type GaAs Schottky barrier diodes
    TG A Asimov, M AHMETOGLU, B Kucur, M ZER
    Optoelectronics and Advanced Materials-Rapid Communications 7 (July-August 2013
    Citations: 1