Dr T Venish Kumar

@nscet.org

Associate Professor ECE
Nadar Saraswathi College of Engineering and Technology

Dr T Venish Kumar


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https://researchid.co/venishkumar

RESEARCH, TEACHING, or OTHER INTERESTS

Engineering
7

Scopus Publications

170

Scholar Citations

6

Scholar h-index

4

Scholar i10-index

Scopus Publications

  • GaN HEMT-Based Power Amplifiers: Advancements and Applications
    T. Venish Kumar, R. Karthick, C. Nandhini, M. Annalakshmi, R. Rajesh Kanna
    Circuit Design for Modern Applications, 2025
    This chapter examines the use of gallium nitride high electron mobility transistor (GaN HEMT) devices in power amplifiers, providing a thorough summary of their characteristics, benefits, and uses. Gallium nitride high-entropy metals (GaN HEMTs) have gained prominence as a prominent technology in the realm of power amplification due to their remarkable attributes, such as heightened electron mobility, increased breakdown voltage, broad bandgap, and enhanced thermal stability. The aforementioned characteristics render GaN HEMTs very suitable for applications involving high frequencies and high power, including but not limited to telephony, radar systems, and satellite communication. The discussion encompasses the key advantages of GaN HEMTs, including high power density, broad frequency range, low output capacitance, and fast switching speed. The wide-bandgap characteristic enables operation at elevated temperatures, addressing critical thermal challenges in various applications. The reduced thermal resistance of GaN HEMTs contributes to efficient thermal management and enhanced reliability. Design considerations for GaN HEMT-based power amplifiers are explored, emphasizing factors such as biasing, matching networks, and impedance matching. Furthermore, the abstract underscores the significance of packaging and cooling solutions to optimize performance, especially in high-power scenarios. The abstract concludes by highlighting the dynamic landscape of GaN HEMT technology and its ongoing impact on advancing power amplifier capabilities across diverse industries.
  • Synthesis and investigation of Sm3+-doped Mn0.5Cu0.5Fe2O4 nanoferrites for microstrip patch antenna application
    R. Rajesh Kanna, P. Jeyakumar, N. Lenin, G. Marimuthu, Mookkandi Palsamy Kesavan, T. Venish Kumar
    Journal of Materials Science Materials in Electronics, 2023
  • Cylindrical Dielectric Resonator Antenna with a Key-Shaped Microstrip Line for 2.4 GHz Wireless Applications
    B. Manikandan, D. Thiripurasundari, R. Athilingam, G. Karthikeyan, T. Venish Kumar
    Lecture Notes in Electrical Engineering, 2023
  • Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications
    T. Venish Kumar, M. Venkatesh, B. Muthupandian, G. Lakshmi Priya
    Silicon, 2022
  • Performance Analysis of Emerging Low-Power Junctionless Tunnel FETs
    G. Lakshmi Priya, M. Venkatesh, S. Preethi, T. Venish Kumar, N. B. Balamurugan
    Emerging Low Power Semiconductor Devices Applications for Future Technology Nodes, 2022
    Continued scaling of devices has been strongly influenced by the recent advancements in channel engineering and device fabrication technology for realizing improved performance. As the device dimensions are continuously shrinking,the gate loses its complete control over the channel, and this leads to numerous short-channel effects (SCEs). Nanotechnology device engineers have been investigating and searching for novel device structures to further improve the performance of the device in terms of reduced SCEs. In this regard, a quantum tunneling-based field-effect transistor (FET) known as tunnel FET (TFET) has evolved as a promising candidate that has several advantages such as diminished SCEs and high I ON/I OFF ratio and subthreshold swing (SS) less than 60 mV/decade. Also, the concept of work function engineering in the gate metal region is another phenomenal solution to reduce the SCEs. A dual material double-gate (DMDG) TFET structure employs two gate materials with different work functions placed side by side to introduce a step-like profile in the channel. Hence, various research works are in progress to improve the subthreshold characteristics of a device with enhanced oxide interface. High-K gate dielectric materials can be treated as the best solution for concurrent minimization of gate leakage current. However,Si-based TFETs and SiO2 as a gate dielectric resulted in poor electrostatics, and a very high gate voltage is required for TFET operation. Also,the gate leakage current will be very large,exceeding1 A/cm2 at 1 V, which is due to the tunneling of electrons through the SiO2 layer. To overcome these scaling limitations,a junctionless metal oxide semiconductor field-effect transistor (MOSFET) (JLFET) was proposed. The doping concentration of these JL transistors is uniform throughout the device. This uniform doping helps the JL FETs to eliminate the formation of source/channel and channel/drain junctions. Dual material double-gate JLTFET (DMDG JLTFET) with a stacked/heterodielectric gate-oxide structure is proposed. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. With gate work function engineering and titanium oxide (TiO2) as gate dielectric, the proposed device will have better control over the vertical field, thereby reducing the penetration of hot electrons through the gate oxide and improving the device performance. A comparative analysis of SCEs for DMDG TFET and DMDG JLTFET has been carried out. The results reveal that the proposed device provides better ION current, low leakage current, and improved transconductance-to-drain-current ratio.
  • Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)
    T. Venish Kumar, N. B. Balamurugan
    Journal of Computational Electronics, 2020
  • Analytical modeling of InSb/AlInSb heterostructure dual gate high electron mobility transistors
    T. Venish Kumar, N.B. Balamurugan
    AEU International Journal of Electronics and Communications, 2018

RECENT SCHOLAR PUBLICATIONS

  • GaN HEMT-Based Power Amplifiers: Advancements and Applications
    TV Kumar, R Karthick, C Nandhini, M Annalakshmi, RR Kanna
    Circuit Design for Modern Applications, 320-333 , 2025
    2025
    Citations: 9
  • 20 GaN Power HEMT-Based Amplifiers
    TV Kumar, R Karthick, C Nandhini, M Annalakshmi, RR Kanna
    Circuit Design for Modern Applications, 320 , 2025
    2025
    Citations: 1
  • Reversible Logic based Cryptography Design Algorithm using Random Keys
    S Rithiga, TV Kumar, M Idhayachandran, S Prathap
    Journal of Electronics and Informatics 5 (2), 154-164 , 2023
    2023
  • Emerging low-power semiconductor devices: Applications for future technology nodes
    S Tayal, AK Upadhyay, D Kumar, SB Rahi
    CRC Press , 2022
    2022
    Citations: 45
  • Performance Analysis of Emerging Low-Power Junctionless Tunnel FETs
    GL Priya, M Venkatesh, S Preethi, TV Kumar, NB Balamurugan
    Emerging Low-Power Semiconductor Devices, 107-125 , 2022
    2022
    Citations: 1
  • Charge density based small signal modeling for InSb/AlInSb asymmetric double gate silicon substrate HEMT for high frequency applications
    TV Kumar, M Venkatesh, B Muthupandian, GL Priya
    Silicon 14 (11), 6009-6018 , 2022
    2022
    Citations: 6
  • Cylindrical Dielectric Resonator Antenna with a Key-Shaped Microstrip Line for 2.4 GHz Wireless Applications
    B Manikandan, D Thiripurasundari, R Athilingam, G Karthikeyan, ...
    International Conference on Futuristic Communication and Network … , 2021
    2021
  • Three‐dimensional analytical modeling for small‐geometry AlInSb/ AlSb/InSb double‐gate high‐electron‐mobility transistors (DG‐HEMTs)
    T kumar
    Journal of Computational Electronics , 2020
    2020
    Citations: 32
  • Automated health monitoring system for premature fetus
    R Karthick, B Rinoj, TV Kumar, AM Prabaharan, P Selvaprasanth
    Asian Journal of Applied Science and Technology (AJAST)(Peer Reviewed … , 2019
    2019
    Citations: 36
  • Analytical modeling of InSb/AlInSb heterostructure dual gate high electron mobility transistors
    TV Kumar, NB Balamurugan
    AEU-International Journal of Electronics and Communications 94, 19-25 , 2018
    2018
    Citations: 40
  • A Design of Quadded Logic with Quadded Transistor Circuit Using Dynamic Voltage Scaling
    RG N Nandhini, Mr T Venishkumar
    International Journal of Engineering Science , 2016
    2016
  • TCAD Simulation Study of Algan/Gan High Electron Mobility Transistors(HEMT)
    TVNB Balamurugan
    International Journal of Applied Engineering Research 10 (11), 30083-30089 , 2015
    2015
  • Designing a Unique architecture for error correcting code to reduce complexity
    T Kumar
    International Journal of Advanced information Science and technology 34 (34 … , 2015
    2015
  • Pre Improved Weighted Modulo 2n+1 Design Based On Parallel Prefix Adder
    TTL Dr.V.Vidya Devi, T.Venishkumar
    International Journal of Engineering and Innovative Technology (IJEIT) 2 (5 … , 2012
    2012

MOST CITED SCHOLAR PUBLICATIONS

  • Emerging low-power semiconductor devices: Applications for future technology nodes
    S Tayal, AK Upadhyay, D Kumar, SB Rahi
    CRC Press , 2022
    2022
    Citations: 45
  • Analytical modeling of InSb/AlInSb heterostructure dual gate high electron mobility transistors
    TV Kumar, NB Balamurugan
    AEU-International Journal of Electronics and Communications 94, 19-25 , 2018
    2018
    Citations: 40
  • Automated health monitoring system for premature fetus
    R Karthick, B Rinoj, TV Kumar, AM Prabaharan, P Selvaprasanth
    Asian Journal of Applied Science and Technology (AJAST)(Peer Reviewed … , 2019
    2019
    Citations: 36
  • Three‐dimensional analytical modeling for small‐geometry AlInSb/ AlSb/InSb double‐gate high‐electron‐mobility transistors (DG‐HEMTs)
    T kumar
    Journal of Computational Electronics , 2020
    2020
    Citations: 32
  • GaN HEMT-Based Power Amplifiers: Advancements and Applications
    TV Kumar, R Karthick, C Nandhini, M Annalakshmi, RR Kanna
    Circuit Design for Modern Applications, 320-333 , 2025
    2025
    Citations: 9
  • Charge density based small signal modeling for InSb/AlInSb asymmetric double gate silicon substrate HEMT for high frequency applications
    TV Kumar, M Venkatesh, B Muthupandian, GL Priya
    Silicon 14 (11), 6009-6018 , 2022
    2022
    Citations: 6
  • 20 GaN Power HEMT-Based Amplifiers
    TV Kumar, R Karthick, C Nandhini, M Annalakshmi, RR Kanna
    Circuit Design for Modern Applications, 320 , 2025
    2025
    Citations: 1
  • Performance Analysis of Emerging Low-Power Junctionless Tunnel FETs
    GL Priya, M Venkatesh, S Preethi, TV Kumar, NB Balamurugan
    Emerging Low-Power Semiconductor Devices, 107-125 , 2022
    2022
    Citations: 1
  • Reversible Logic based Cryptography Design Algorithm using Random Keys
    S Rithiga, TV Kumar, M Idhayachandran, S Prathap
    Journal of Electronics and Informatics 5 (2), 154-164 , 2023
    2023
  • Cylindrical Dielectric Resonator Antenna with a Key-Shaped Microstrip Line for 2.4 GHz Wireless Applications
    B Manikandan, D Thiripurasundari, R Athilingam, G Karthikeyan, ...
    International Conference on Futuristic Communication and Network … , 2021
    2021
  • A Design of Quadded Logic with Quadded Transistor Circuit Using Dynamic Voltage Scaling
    RG N Nandhini, Mr T Venishkumar
    International Journal of Engineering Science , 2016
    2016
  • TCAD Simulation Study of Algan/Gan High Electron Mobility Transistors(HEMT)
    TVNB Balamurugan
    International Journal of Applied Engineering Research 10 (11), 30083-30089 , 2015
    2015
  • Designing a Unique architecture for error correcting code to reduce complexity
    T Kumar
    International Journal of Advanced information Science and technology 34 (34 … , 2015
    2015
  • Pre Improved Weighted Modulo 2n+1 Design Based On Parallel Prefix Adder
    TTL Dr.V.Vidya Devi, T.Venishkumar
    International Journal of Engineering and Innovative Technology (IJEIT) 2 (5 … , 2012
    2012