Scopus Publications
- Fluid–rock–deformation interactions in the fossil Zanskar detachment footwall (NW India) revealing Early Miocene exhumation, and high-altitude ancient rainfall
Aude Gébelin, Richard D. Law, Timothy J. Webster, Donald W. Stahr III, Andreas Mulch, et al.
Journal of the Geological Society, 2026
The South Tibetan Detachment (STD) is parallel to the east–west-trending axis of the Himalayan range over >1500 km and represents an untapped source of information for understanding the coupling between multi-scale deformation processes, fluid flow, exhumation of high-grade rocks and topography. Here, we present hydrogen isotope ( δ 2 H) geochemistry, quartz c -axis fabric deformation thermometry and electron microprobe micro-analyser data from a strand of the STD exposed in NW India (the Zanskar Detachment). Our data document intense meteoric fluid–rock–deformation interactions within the upper part of the hot (>400°C) mylonitic footwall to the detachment, which was active at 22–20 Ma. Calculated δ 2 H water values ranging from −115 to −95‰ suggest that the Zanskar area was standing at least above 2500–3000 m mean topographic elevation during the early Miocene. When compared with previous data obtained from Mt Everest, our results suggest that high topography along the Himalayan range was diachronous, occurring at c . 20 Ma in the western Himalaya (>3000) and at c . 15 Ma in the Central Himalaya (>5000 m). This study highlights the close relationships between topography, meteoric fluid flow, high heat flux and exhumation of the Himalayan Crystalline Core. - Tuning Superconductivity in Nanosecond Laser-Annealed Boron-Doped Si1–xGex Epilayers
Shimul Kanti Nath, Ibrahim Turan, Léonard Desvignes, Ludovic Largeau, Olivia Mauguin, et al.
Physica Status Solidi A Applications and Materials Science, 2024
Superconductivity in ultradoped Si1−xGex:B epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to 7 at%. A Ge fraction x ranging from 0 to 0.21 is incorporated in Si:B: 1) through a precursor gas, by gas immersion laser doping; 2) by ion implantation, followed by nanosecond laser annealing; and 3) by ultrahigh‐vacuum‐chemical vapor deposition growth of a thin Ge layer, followed by nanosecond laser annealing. The 30 and 75 nm‐thick Si1−xGex:B epilayers display superconducting critical temperatures Tc tuned by B and Ge between 0 and 0.6 K. Within Bardeen Cooper Schrieffer (BCS) weak‐coupling theory, Tc evolves exponentially with both the density of states and the electron–phonon potential. While B doping affects both, through the increase of the carrier density and the tensile strain, Ge incorporation allows addressing independently the lattice deformation influence on superconductivity. To estimate the lattice parameter modulation with B and Ge, Vegard's law is validated for the ternary SiGeB bulk alloy by density functional theory calculations. Its validity is furthermore confirmed experimentally by X‐ray diffraction. A global linear dependence of Tc versus lattice parameter, common for both Si:B and Si1−xGex:B, with δTc/Tc ≈ 50% for δa/a ≈1%, is highlighted. - A multiscale approach to enhance the thermoelectric properties of α-SrSi2 through micro-/nano-structuring and Ba substitution
Rana Ghannam, Loic Coulomb, Adrien Moll, David Bérardan, David Maurin, et al.
Journal of Alloys and Compounds, 2024 - Geodynamic seawater-sediment porewater evolution of the east central Atlantic Paleogene ocean margin revealed by U-Pb dating of sedimentary phosphates
Jérémie Aubineau, Fleurice Parat, Ernest Chi Fru, Radouan El Bamiki, Olivia Mauguin, et al.
Frontiers in Earth Science, 2022
Emerging evidence suggests that U-Pb and Lu-Hf ages of sedimentary apatite group minerals are often younger than their biostratigraphic ages. However, U-Pb dating of exquisitely preserved carbonate fluorapatite (CFA) is rare. The Upper Cretaceous/Paleogene marine sedimentary rocks of the Moroccan High Atlas host phosphate-rich sediments bracketed by calcareous nannofossil Zones (NP4-NP9) of late Danian to Thanetian age. Here, we use a laser-ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) to decipher whether CFA minerals are suitable for U-Pb chronostratigraphy and whether they can reveal the sedimentary and seawater history from which they formed. U-Pb dating of the CFA grains yields ages of 42.9 ± 1.3 Ma (MSWD = 2.3) and 35.7 ± 2.8 Ma (MSWD = 1.3) from three distinct phosphate-rich beds, being >15 million years younger than the expected biostratigraphic age. Combined scanning electron microscopy, X-ray diffraction, and infrared spectroscopy analyses, associate the Mg-rich clay minerals sepiolite and palygorskite, with micro-CFA crystals, while LA-ICP-MS trace element, rare earth element, and yttrium content for primary CFA grains, collectively point to long-term early diagenetic adsorption from oxygenated seawater-dominated porewater fluids. Authigenic clay minerals display a seawater-like pattern, with negligible U concentrations suggesting limited clay mineral influence on U-Pb dating of the CFA crystals. Considering the absence of extensive post-depositional alteration, we propose that because of their large surface area, the µm-sized CFA crystallites facilitated real-time surface adsorption and desorption of elements and diffusion processes. These conditions generated long-term open system connection of sediments with overlying seawater, enabling continuous U-Pb exchange for 15–25 Myr after phosphate precipitation. The data suggest that system closure was potentially associated with sediment lithification and the Atlas orogeny, pointing to stable oxygenation of shallow marine waters along the eastern passive margin of the central Atlantic Ocean in the Paleogene. - Highly variable content of fluorapatite-hosted CO32−in the Upper Cretaceous/Paleogene phosphorites (Morocco) and implications for paleodepositional conditions
Jérémie Aubineau, Fleurice Parat, Abdellatif Elghali, Otmane Raji, Aissam Addou, et al.
Chemical Geology, 2022 - Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates
K. Pantzas, G. Beaudoin, M. Bailly, A. Martin, A. Grisard, et al.
Philosophical Magazine, 2021
The mechanical stability of commercial GaP/Si templates during thermal annealing and subsequent growth of GaP and AlGaP using metal-organic chemical-vapour deposition is investigated. Although the as-grown GaP layer of the template originally presents an excellent surface morphology, annealing at temperatures between 645 C to 845 C to remove the native oxide prior to growth leads to plastic relaxation, accompanied by a variety of defects, including a dense grid of micro-twins. These micro-twins detrimentally affect GaP and AlGaP layers grown subsequently on the template. - 1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency
Ahmed Ben Slimane, Amadeo Michaud, Olivia Mauguin, Xavier Lafosse, Adrien Bercegol, et al.
Progress in Photovoltaics Research and Applications, 2020
We report on AlGaAs‐based heterojunction solar cells grown by solid source molecular beam epitaxy (MBE). We investigate InGaP and AlGaAs material quality and we demonstrate significant efficiency improvements by combining the best of each alloy: a thick p‐AlGaAs base with tunable bandgap, and a thin 50 nm n‐InGaP emitter separated by a thin intrinsic AlGaAs layer. We report a certified solar cell conversion efficiency of 18.7% with a 2‐μm‐thick AlGaAs layer and a bandgap of 1.73 eV, suitable for high efficiency Si‐based tandem devices. - Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization
D. Pelati, G. Patriarche, L. Largeau, O. Mauguin, L. Travers, et al.
Thin Solid Films, 2020 - GaN/Ga2O3 core/shell nanowires growth: Towards high response gas sensors
Quang Chieu Bui, Ludovic Largeau, Martina Morassi, Nikoletta Jegenyes, Olivia Mauguin, et al.
Applied Sciences Switzerland, 2019
The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core. - GaAs (1 1 1)epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity
D. Pelati, G. Patriarche, O. Mauguin, L. Largeau, L. Travers, et al.
Journal of Crystal Growth, 2019 - AlGaAs/InGaP MBE-grown heterostructures for 1.73eV Solar Cells with 18.7% Efficiency
Ahmed Ben Slimane, Amadeo Michaud, Adrien Bercegol, Julie Goffard, Olivia Mauguin, et al.
Conference Record of the IEEE Photovoltaic Specialists Conference, 2019 - Coherent generation and detection of acoustic phonons in topological nanocavities
G. Arregui, O. Ortíz, M. Esmann, C. M. Sotomayor-Torres, C. Gomez-Carbonell, et al.
APL Photonics, 2019 - Topological states of acoustic phonons in semiconductor nanocavities
International Conference on Metamaterials Photonic Crystals and Plasmonics, 2019 - Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma
D. Pelati, O. Mauguin, L. Largeau, F. Brisset, F. Glas, et al.
Surface and Coatings Technology, 2018 - In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge
D. Pelati, G. Patriarche, O. Mauguin, L. Largeau, F. Brisset, et al.
Crystal Growth and Design, 2017 - Modulating the Ferromagnet/Molecule Spin Hybridization Using an Artificial Magnetoelectric
Michał Studniarek, Salia Cherifi‐Hertel, Etienne Urbain, Ufuk Halisdemir, Rémi Arras, et al.
Advanced Functional Materials, 2017 - Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: A new paradigm for III-V/Si integration
Romain Cariou, Wanghua Chen, Jean-Luc Maurice, Jingwen Yu, Gilles Patriarche, et al.
Scientific Reports, 2016 - Sub-nanometrically resolved chemical mappings of quantum-cascade laser active regions
Konstantinos Pantzas, Grégoire Beaudoin, Gilles Patriarche, Ludovic Largeau, Olivia Mauguin, et al.
Semiconductor Science and Technology, 2016 - Self-induced growth of vertical GaN nanowires on silica
V Kumaresan, L Largeau, F Oehler, H Zhang, O Mauguin, et al.
Nanotechnology, 2016 - Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO
K. Pantzas, D.J. Rogers, P. Bove, V.E. Sandana, F.H. Teherani, et al.
Journal of Crystal Growth, 2016 - Erratum: Self-induced growth of vertical GaN nanowires on silica (Nanotechnology (2015) 27 (135602) DOI: 10.1088/0957-4484/27/13/135602)
V Kumaresan, L Largeau, F Oehler, H Zhang, O Mauguin, et al.
Nanotechnology, 2016 - Crystallization of Si templates of controlled shape, size, and orientation: Toward micro- and nanosubstrates
Yann Cohin, Frank Glas, Andrea Cattoni, Sophie Bouchoule, Olivia Mauguin, et al.
Crystal Growth and Design, 2015 - Silicon surface preparation for III-V molecular beam epitaxy
K. Madiomanana, M. Bahri, J.B. Rodriguez, L. Largeau, L. Cerutti, et al.
Journal of Crystal Growth, 2015 - Rapid thermal annealing effects on the optical properties of GaAs0.9-xNxSb0.1 structures grown by MBE
N. Ben Sedrine, X. Lafosse, O. Mauguin, R. Chtourou, J.C. Harmand
Materials Science in Semiconductor Processing, 2015 - Strain engineering in germanium microdisks
A. Ghrib, M. El Kurdi, M. Prost, M. de Kersauson, L. Largeau, et al.
Proceedings of SPIE the International Society for Optical Engineering, 2014 - AlGaAs microdisk cavities for second-harmonic generation
Silvia Mariani, Alessio Andronico, Olivia Mauguin, Aristide Lemaître, Ivan Favero, et al.
Optics Letters, 2013 - Growth of vertical GaAs nanowires on an amorphous substrate via a fiber-textured Si platform
Yann Cohin, Olivia Mauguin, Ludovic Largeau, Gilles Patriarche, Frank Glas, et al.
Nano Letters, 2013 - Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon
A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, et al.
Applied Physics Letters, 2013 - Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers
M. de Kersauson, M. Prost, A. Ghrib, M. El Kurdi, S. Sauvage, et al.
Journal of Applied Physics, 2013 - Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, L. Largeau, et al.
Journal of Crystal Growth, 2013 - Annealing effect on the magnetization reversal and Curie temperature in a GaMnAs layer
H. Riahi, W. Ouerghui, L. Thevenard, C. Gourdon, M.A. Maaref, et al.
Journal of Magnetism and Magnetic Materials, 2013 - X-ray diffraction and raman spectroscopy study of strain in graphene films grown on 6H-SiC(0001) using propane-hydrogen-argon CVD
Adrien Michon, Ludovic Largeau, Antoine Tiberj, Jean Roch Huntzinger, Olivia Mauguin, et al.
Materials Science Forum, 2013 - Strain engineering for optical gain in germanium
Moustafa El Kurdi, Malo de Kersauson, Abdelhamid Ghrib, M. Prost, Sébastien Sauvage, et al.
Ecs Transactions, 2013 - Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells to Si
A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, et al.
Conference Proceedings International Conference on Indium Phosphide and Related Materials, 2012 - Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy
K Pantzas, G Patriarche, D Troadec, S Gautier, T Moudakir, et al.
Nanotechnology, 2012 - Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): Temperature dependent interface and strain
A. Michon, L. Largeau, O. Mauguin, A. Ouerghi, S. Vézian, et al.
Physica Status Solidi C Current Topics in Solid State Physics, 2012 - Erratum: Discretized disorder in planar semiconductor microcavities: Mosaicity effect on resonant Rayleigh scattering and optical parametric oscillation (Physical Review B - Condensed Matter and Materials Physics (2012) 85:4 (049902))
Marco Abbarchi, Carole Diederichs, Ludovic Largeau, Vincenzo Ardizzone, Olivia Mauguin, et al.
Physical Review B Condensed Matter and Materials Physics, 2012 - Discretized disorder in planar semiconductor microcavities: Mosaicity effect on resonant Rayleigh scattering and optical parametric oscillation
Marco Abbarchi, Carole Diederichs, Ludovic Largeau, Vincenzo Ardizzone, Olivia Mauguin, et al.
Physical Review B Condensed Matter and Materials Physics, 2012 - Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C
M. Labrune, X. Bril, G. Patriarche, L. Largeau, O. Mauguin, et al.
EPJ Photovoltaics, 2012 - Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN
Liubov Magdenko, Gilles Patriarche, David Troadec, Olivia Mauguin, Erwan Morvan, et al.
Journal of Vacuum Science and Technology B Nanotechnology and Microelectronics, 2012 - Heteroepitaxial bonding of GalnAs quantum wells on Si: A new approach towards photonic integration on Si for devices operating at 1.55 μm
Conference Proceedings International Conference on Indium Phosphide and Related Materials, 2011 - Picosecond carrier lifetimes in dilute GaInNAs grown on InP substrate
J. Mangeney, T. Laurent, M. Martin, J. C. Harmand, L. Travers, et al.
Applied Physics Letters, 2011 - Enhanced optical generation and detection of acoustic nanowaves in microcavities
N. D. Lanzillotti-Kimura, A. Fainstein, B. Perrin, B. Jusserand, L. Largeau, et al.
Physical Review B Condensed Matter and Materials Physics, 2011 - P and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor
Roberto Jakomin, Gregoire Beaudoin, Noelle Gogneau, Bruno Lamare, Ludovic Largeau, et al.
Thin Solid Films, 2011 - High quality tensile-strained n -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition
R. Jakomin, M. de Kersauson, M. El Kurdi, L. Largeau, O. Mauguin, et al.
Applied Physics Letters, 2011 - Atomic structure of tip apex for spin-polarized scanning tunneling microscopy
G. Rodary, J.-C. Girard, L. Largeau, C. David, O. Mauguin, et al.
Applied Physics Letters, 2011 - Deep structural analysis of novel BGaN material layers grown by MOVPE
S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, et al.
Journal of Crystal Growth, 2011 - Injection of midinfrared surface plasmon polaritons with an integrated device
J.-P. Tetienne, A. Bousseksou, D. Costantini, R. Colombelli, A. Babuty, et al.
Applied Physics Letters, 2010 - Epitaxial growth of germanium on silicon using a Gd2O 3/Si (111) crystalline template
G. Niu, L. Largeau, G. Saint-Girons, B. Vilquin, J. Cheng, et al.
Journal of Vacuum Science and Technology A Vacuum Surfaces and Films, 2010 - Bloch oscillations of THz acoustic phonons in coupled nanocavity structures
N. D. Lanzillotti-Kimura, A. Fainstein, B. Perrin, B. Jusserand, O. Mauguin, et al.
Physical Review Letters, 2010 - Optical spectroscopy of two-dimensional layered (C6H 5C2H4-NH3)2-PbI 4 perovskite
K. Gauthron, J-S. Lauret, L. Doyennette, G. Lanty, A. Al Choueiry, et al.
Optics Express, 2010 - Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys
M. Cubukcu, H. J. von Bardeleben, Kh. Khazen, J. L. Cantin, O. Mauguin, et al.
Physical Review B Condensed Matter and Materials Physics, 2010 - Loss-reduction in midinfrared photonic crystal quantum cascade lasers using metallic waveguides
Gangyi Xu
Optical Engineering, 2010 - Epitaxial growth and picosecond carrier dynamics at 1.55μm of GaInAs/GaInNAs superlattices
M. Martin, J. Mangeney, L. Travers, C. Minot, J-C Harmand, et al.
34th International Conference on Infrared Millimeter and Terahertz Waves Irmmw Thz 2009, 2009 - Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices
M. Tran, J. Peiro, H. Jaffrès, J.-M. George, O. Mauguin, et al.
Applied Physics Letters, 2009 - Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices
M. Martin, J. Mangeney, L. Travers, C. Minot, J. C. Harmand, et al.
Applied Physics Letters, 2009 - Influence of the surface reconstruction on the growth of InP on SrTiO3(0 0 1)
J. Cheng, P. Regreny, L. Largeau, G. Patriarche, O. Mauguin, et al.
Journal of Crystal Growth, 2009 - Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers
A. Lemaître, A. Miard, L. Travers, O. Mauguin, L. Largeau, et al.
Applied Physics Letters, 2008 - Metamorphic approach to single quantum dot emission at 1.55 μm on GaAs substrate
E. S. Semenova, R. Hostein, G. Patriarche, O. Mauguin, L. Largeau, et al.
Journal of Applied Physics, 2008 - Ferromagnetic resonance of Ga0.93 Mn0.07 As thin films with constant Mn and variable free-hole concentrations
Kh. Khazen, H. J. von Bardeleben, J. L. Cantin, L. Thevenard, L. Largeau, et al.
Physical Review B Condensed Matter and Materials Physics, 2008 - Surface-plasmon distributed-feedback mid-infrared quantum cascade lasers based on hybrid plasmon/air-guided modes
A. Bousseksou, V. Moreau, R. Colombelli, C. Sirtori, G. Patriarche, et al.
Electronics Letters, 2008 - GaN/AlN free-standing nanowires grown by molecular beam epitaxy
M. Tchernycheva, C. Sartel, G. Cirlin, L. Travers, G. Patriarche, et al.
Physica Status Solidi C Current Topics in Solid State Physics, 2008 - A periodic thin film filters for acoustic phonons
N D Lanzillotti-Kimura, A Fainstein, B Jusserand, A Lemaître, O Mauguin, et al.
Journal of Physics Conference Series, 2007 - Acoustic phonon nanowave devices based on aperiodic multilayers: Experiments and theory
N. D. Lanzillotti-Kimura, A. Fainstein, B. Jusserand, A. Lemaître, O. Mauguin, et al.
Physical Review B Condensed Matter and Materials Physics, 2007 - Domain structure and magnetic anisotropy fluctuations in (Ga,Mn)As: Effect of annealing
A. Dourlat, V. Jeudy, C. Testelin, F. Bernardot, K. Khazen, et al.
Journal of Applied Physics, 2007 - Evolution of the magnetic anisotropy with carrier density in hydrogenated Ga1-x Mnx As
L. Thevenard, L. Largeau, O. Mauguin, A. Lemaître, K. Khazen, et al.
Physical Review B Condensed Matter and Materials Physics, 2007 - Dependence of magnetic anisotropies and critical temperatures on the hole concentration in ferromagnetic GaMnAs thin films
Kh. Khazen, H. J. von Bardeleben, J. L. Cantin, L. Thevenard, L. Largeau, et al.
IEEE Transactions on Magnetics, 2007 - Parametric generation of twin photons in vertical triple microcavities
Carole Diederichs, David Taj, Thimothée Lecomte, Crisitiano Ciuti, Philippe Roussignol, et al.
Comptes Rendus Physique, 2007 - InAs(Sb) quantum dots grown on GaAs by MBE
V. Sallet, G. Patriarche, O. Mauguin, L. Largeau, L. Travers
Physica Status Solidi C Current Topics in Solid State Physics, 2006 - Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
L. Thevenard, L. Largeau, O. Mauguin, G. Patriarche, A. Lemaître, et al.
Physical Review B Condensed Matter and Materials Physics, 2006 - Quantum-well saturable absorber at 1.55 μm on GaAs substrate with a fast recombination rate
M. Le Dû, J.-C. Harmand, O. Mauguin, L. Largeau, L. Travers, et al.
Applied Physics Letters, 2006 - Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
V. Sallet, G. Patriarche, M.N. Merat-Combes, L. Largeau, O. Mauguin, et al.
Journal of Crystal Growth, 2006 - Metal-insulator transition and magnetic domains in (Ga,Mn)As epilayers
Alexandre Dourlat, Catherine Gourdon, Vincent Jeudy, Frédéric Bernardot, Christophe Testelin, et al.
Materials Research Society Symposium Proceedings, 2006 - Tuning the ferromagnetic properties of hydrogenated GaMnAs
L. Thevenard, L. Largeau, O. Mauguin, A. Lemaître, B. Theys
Applied Physics Letters, 2005 - Tuning the ferromagnetic properties of hydrogenated GaMnAs
A. Lemaître
Aip Conference Proceedings, 2005 - MBE growth of InAsN on (100) InAs substrates
V. Sallet, L. Largeau, O. Mauguin, L. Travers, J. C. Harmand
Physica Status Solidi B Basic Research, 2005
