Nitesh K. Chourasia
@jnu.ac.in
National Postdoctiral Fellow, Physics
Jawaharlal Nehru University, New Delhi, India
Nitesh K. Chourasia is currently working as a National Postdoctoral Fellow at the School of Physical Sciences, Jawaharlal Nehru University, India. His research work is to study the MXene-based toxic gas sensor for wearable electronics. Moreover, he has been involved in the development of novel ion-conducting dielectric-based optoelectronic devices using 2D materials.
EDUCATION
PhD from IIT BHU, Varanasi
RESEARCH, TEACHING, or OTHER INTERESTS
Condensed Matter Physics, Philosophy
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Rakesh Kumar, Patel Maneshwar Rai, Nitesh K. Chourasia, Manish Kumar, Arun Kumar Singh, Aavishkar Katti, and Ritesh Kumar Chourasia
Springer Nature Singapore
Ankita Rawat, Nitesh K. Chourasia, Saurabh K. Saini, Gaurav Rajput, Aditya Yadav, Ritesh Kumar Chourasia, Govind Gupta, and P. K. Kulriya
Royal Society of Chemistry (RSC)
Ti3C2Tx MXene was synthesized through LiF/HCl etching, and its structural and optical properties were examined. Additionally, ultrafast transient absorption spectroscopy was employed to investigate the excited state dynamics and electronic structure across the femtosecond to nanosecond timescales.
Nitesh K. Chourasia, Ankita Rawat, Ritesh Kumar Chourasia, Hemant Singh, Ramesh Kumar Kulriya, Vinod Singh, and Pawan Kumar Kulriya
Royal Society of Chemistry (RSC)
Graphical abstract of the review article, which offers a fresh perspective on the utilization of Ti3C2Tx MXene in gas sensing applications, including experimental as well as theoretical aspects.
Atish Kumar Sharma, Rakesh Kumar, Prakash Kumar Jha, Manish Kumar, Nitesh K. Chourasia, and Ritesh Kumar Chourasia
Springer Science and Business Media LLC
Atish Kumar Sharma, Ankita Srivastava, Prakash Kumar Jha, Rakesh Kumar, Manish Kumar, Pawan Kumar Kulriya, Nitesh K. Chourasia, and Ritesh Kumar Chourasia
Wiley
Herein, the role of bulk/interface defects and their impact on the performance of novel solar cell device structure p‐Si/n‐CdS/ALD‐ZnO (atomic layer deposited zinc oxide) heterojunction solar cells are shown. To calculate all important parameters and connect both types of defects with the performance of the solar cell, a theoretical model to simulate using well developed, established, and globally popular SCAPS‐1D simulation tool is developed. The different types of optimized simulation parameters that improved the performance of the solar cell have been calculated using bulk defects (p‐Si absorber), interfacial defects (p‐Si/n‐CdS interface), emitter layer (n‐CdS) thickness, and window layer (ALD‐ZnO) thickness. A further effect of incident radiation on the quantum efficiency and the spectral response has been plotted along with the I–V characteristics of the proposed solar cell. Based on the proposed simulation and comparing with the existing experimental and simulation results for similar combinations of the solar cell, this detailed study suggests that the highest efficiency η = 19.97%, fill factor = 83.37% with open circuit voltage = 635.3 mV, and short circuit current = 37.71 mA cm−2 can be achieved. Finally, the obtained performance parameters are best in class with the tabulated existing ones.
Prakash Kumar Jha, Nitesh K. Chourasia, Ankita Srivastava, Atish Kumar Sharma, Rakesh Kumar, Subhash Sharma, Manish Kumar, and Ritesh Kumar Chourasia
Springer Science and Business Media LLC
Atish Kumar Sharma, Nitesh K. Chourasia, Prakash Kumar Jha, Rakesh Kumar, Manish Kumar, and Ritesh Kumar Chourasia
Springer Science and Business Media LLC
Narendra Bihari, Ankita Srivastava, Nitesh K. Chourasia, and Ritesh Kumar Chourasia
IOP Publishing
Abstract The propagation of H-polarized electromagnetic (EM) waves in polymeric (PEI)-chalcogenide (As2Se3) photonic materials (PCCPM) has been theoretically optimized and investigated in the current work. We used the Transfer Matrix Technique (TMT) and Hankel Realism (HR) in columnar coordinates to show numerical findings for the unit columnar junction and columnar slab for both polymeric (low refractive index) and chalcogenide (high refractive index) materials composed at least loss wavelength window (632.8 nm). The optical transmittance with wavelength for both materials for the cylindrical unitary slab displays oscillating and non-oscillating signatures, indicating that the starting radius has a significant impact on the transmittance at a constant slab width. The oscillatory transmittance becomes squizzing when the starting radius is increased. Furthermore, for smaller modal numbers, optical transmittance is an oscillatory function of slab thickness, and for (m=4), it becomes minimum and flat. These scientific breakthroughs pave the door for a variety of photonic devices and sensor applications.
Nitesh K. Chourasia, Narendra Bihari, and Ritesh Kumar Chourasia
Elsevier BV
Utkarsh Pandey, Nitesh K. Chourasia, Nila Pal, Sajal Biring, and Bhola N. Pal
Institute of Electrical and Electronics Engineers (IEEE)
The electrical conductivity of indium–tin oxide (In–Sn-O) arises from the conduction band electrons, which largely varies on the ratio of In and Sn. By exploiting this large variation of electrical conductivity, this material could be treated both as a semiconductor and a transparent conductor. Interestingly, incorporation of lithium (Li) ion can convert it to an effective insulator when the ratio of Li, In, and Sn becomes equal and could be successfully used as a gate dielectric of a thin-film transistor (TFT). In this work, LiInSnO<sub>4</sub> (LITO) thin film has been deposited by a solution-processed technique, which shows high areal capacitance due to its mobile Li-ion. A low operating voltage (≤2 V) solution-processed zinc oxide (ZnO) TFT has been fabricated by using this LiInSnO<sub>4</sub> thin film as a gate dielectric. The carrier mobility of this ZnO TFT has been enhanced by one order by the addition of one titanium oxide (TiO<sub>2</sub>) gate interface due to the reduction of dielectric/semiconductor interface trap state. Our optimized ZnO TFT with TiO<sub>2</sub> gate interface shows the carrier mobility of 5.66 cm<sup>2</sup>/<inline-formula> <tex-math notation="LaTeX">$\\text{V}\\,\\cdot $ </tex-math></inline-formula>,s with an ON/ OFF ratio of <inline-formula> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula>.
Atish Kumar Sharma, Nitesh K. Chourasia, and Ritesh Kumar Chourasia
Elsevier BV
Prakash Kumar Jha, Nitesh K. Chourasia, Atish Kumar Sharma, and Ritesh Kumar Chourasia
Elsevier BV
Narendra Bihari, Nitesh K. Chourasia, and Ritesh Kumar Chourasia
Elsevier BV
Ritesh Kumar Chourasia, Ankita Srivastava, Nitesh K. Chourasia, and Narendra Bihari
Springer Nature Singapore
Nitesh K Chourasia, Ankita Srivastava, Vinay Kumar, and Ritesh Kumar Chourasia
Springer Science and Business Media LLC
Nitesh K. Chourasia, Ankita Srivastava, Vinay Kumar, and Ritesh Kumar Chourasia
Elsevier BV
Nitesh K. Chourasia and Bhola N. Pal
Elsevier
Abhishek Kumar Singh, Nitesh K. Chourasia, Bhola Nath Pal, Amritanshu Pandey, and P. Chakrabarti
Institute of Electrical and Electronics Engineers (IEEE)
This article demonstrates that ZnO can be used both as the insulating dielectric and the channel by appropriately mixing with lithium and indium, respectively. The ion-conducting lithium zinc oxide (Li2ZnO2) as the dielectric and indium zinc oxide (IZO) as the channel used to fabricate thin-film transistors operating in accumulation mode are derived using the solution-processable method. The novelty of the structure is that both dielectric and channel are made up of ZnO, which provide the possibility of least interface trap states with very high capacitive coupling (318 nF/cm2) makes the device more attractive for low power electronics. The fabricated devices exhibit low operational voltage (≤2V) with high carrier mobility. Indium doped-ZnO is a large-bandgap material that can be utilized for narrowband UV-B (310 nm) detection, for narrowband phototherapy to treat certain skin diseases.
Nitesh K. Chourasia, Ankita Srivastava, Vinay Kumar, and Ritesh Kumar Chourasia
Elsevier BV
Nitesh K. Chourasia, Abhishek Kumar Singh, Suyash Rai, Anand Sharma, P. Chakrabarti, Anchal Srivastava, and Bhola N. Pal
Institute of Electrical and Electronics Engineers (IEEE)
Large-area-based field-effect transistor (FET) gas sensor has the potential to provide a larger sensing area for a chemical analyte. So far, graphene FETs (GFETs) are mostly fabricated by expensive lithographic techniques with a minimum channel length. We have demonstrated a simple way to fabricate a very large channel length of 0.45 mm GFET using ion-conducting dielectric with thermally evaporate source/drain electrodes and has been demonstrated for an application of ambient atmosphere ammonia gas sensing. Ion-conducting Li5AlO4 gate dielectric has reduced operating voltage up to 2.0 V with good current saturation. The chemical vapor deposition (CVD) grown uniform monolayer of graphene has been used as an active channel layer of FET. The fabricated device has been tested for different concentrations of ammonia in ambient environment conditions at 25 °C temperature, which indicates that the Dirac point voltage of the device varies up to 0.8 V when the concentration of ammonia has been changed from 0 to 3 ppm. Moreover, this study also reveals that this GFET is capable of detecting ammonia up to the concentration level of 0.1 ppm.
Nitesh K. Chourasia, Anand Sharma, Nila Pal, Sajal Biring, and Bhola N. Pal
Wiley
Herein, dielectric/semiconductor interfacial p‐doping is used to develop a high‐carrier‐mobility and balanced ambipolar tin oxide (SnO2) thin‐film transistor (TFT). To introduce this interfacial doping, TFTs are fabricated by using two different ion‐conducting oxide dielectrics containing trivalent atoms. These ion‐conducting dielectrics are LiInO2 and LiGaO2 containing a mobile Li+ ion that reduces the operating voltage of these TFTs to ≤2.0 V. During SnO2 thin film deposition, the interfacial SnO2 layer is p‐doped by an In or Ga atom of the gate dielectric and therefore, hole conduction is facilitated in the channel of the TFT. To realize this interfacial doping phenomenon, a reference TFT is fabricated with a Li2ZnO2 dielectric that contains a divalent zinc atom. Comparative electrical data indicate that TFTs with LiInO2 and LiGaO2 dielectrics are ambipolar in nature, whereas the TFT with a Li2ZnO2 dielectric is a unipolar n‐channel transistor, corroborating the interfacial doping of SnO2. Most interestingly, using a LiInO2 dielectric, a 1.0 V balanced ambipolar TFT with high electron and hole mobility values of 7 and 8 cm2 V−1 s−1, respectively, can be fabricated, with an on/off ratio > 102 for both operations. The TFT with a LiInO2 dielectric is utilized successfully to fabricate a low‐voltage complementary metal–oxide–semiconductor (CMOS) inverter.
Nitesh K. Chourasia, Vijay K. Singh, Anand Sharma, Anchal Srivastava, and Bhola N. Pal
AIP Publishing
The large channel length graphene field-effect transistor (GFET) can outperform its competitors due to its larger active area and lower noise. Such long channel length devices have numerous applications, e.g., in photodetectors, biosensors, etc. However, long channel length graphene devices are not common due to their semi-metallic nature. Here, we fabricate large channel length (up to 5.7 mm) GFETs through a simple, cost-effective method that requires thermally evaporated source-drain electrode deposition, which is less cumbersome than the conventional wet-chemistry based photolithography. The semiconducting nature of graphene has been achieved by utilizing the Li+ ion of the Li5AlO4 gate dielectric, which shows current saturation at a low operating voltage (∼2 V). The length scaling of these GFETs has been studied with respect to channel length variation within a range from 0.2 mm to 5.7 mm. It is observed that a GFET of 1.65 mm channel length shows optimum device performance with good current saturation. This particular GFET shows a “hole” mobility of 312 cm2 V−1 s−1 with an on/off ratio of 3. For comparison, another GFET has been fabricated in the same geometry by using a conventional SiO2 dielectric that does not show any gate-dependent transport property, which indicates the superior effect of Li+ of the ionic gate dielectric on current saturation.
Abhishek Kumar Singh, Nitesh K. Chourasia, Bhola N. Pal, A. Pandey, and P. Chakrabarti
Institute of Electrical and Electronics Engineers (IEEE)
UV lamps used for phototherapy for the treatment of several skin diseases do not have uniform output. This makes the treatment difficult and less responsive. A Ultraviolet B (UV-B) sensitive thin-film phototransistor has been fabricated and characterized to monitor the intensity of UV radiation in phototherapy of skin diseases like psoriasis, vitiligo, and atopic dermatitis. Phototherapy with UV-B ranges from 280 to 320 nm, safe and very effective for skin disease treatment. Hence, to make it portable and affordable for medical technologies, we have demonstrated the fabrication process of a low-operational (≤2V), low-cost solution-processed Li2ZnO2 (dielectric)/SnO2 (channel)-based phototransistor that shows very high photosensitivity at around ~300 nm of UV-B region. The working principle depends on the passage of UV-B light through a window followed by striking a micrometer-scale semiconductor phototransistor. The responsivity and external quantum efficiency (EQE) of the fabricated phototransistor was found to be about 0.12 A/W and 40.12% at 300 nm, respectively, at a notably low operating voltage (≤2 V). High sensitivity (>200%) with fast response time (7 s) was also achieved with UV-B irradiation of 650 $\\mu \\text{W}$ /cm2. For in-depth performance analysis of the fabricated device, modeling has also been done, and the outcome matched well with the experimental results.
Vishwas Acharya, Anand Sharma, Nitesh K. Chourasia, and Bhola N. Pal
Springer Science and Business Media LLC
Ritesh Kumar Chourasia, Chandan Singh Yadav, Abhishek Upadhyay, Nitesh K. Chourasia, and Vivek Singh
Elsevier BV