Dr. Hemant Kumar Chourasiya
@iuac.res.in
Research Associate
Inter-University Accelerator Center, New Delhi
EDUCATION
Ph.D. (Physics) from Central University of Rajasthan
M.Sc. (Physics) from Dr. Harisingh Gour University, Sagar, (MP)
B.Sc. (Maths, Physics, Electronics) from Rani Durgavati University, Jabalpur, (MP)
RESEARCH, TEACHING, or OTHER INTERESTS
Condensed Matter Physics, Materials Science, Electronic, Optical and Magnetic Materials, Radiation
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Hemant K Chourasiya, Pawan Kumar Kulriya, Neeraj Panwar, and Sandeep Kumar
IOP Publishing
The understanding of the influence of energetic ions on the transport properties of semiconductor materials is essential to design the devices for use in a radiation environment. In this article, an in-situ investigation of the effect of 100 MeV O7+ irradiation on the current-voltage characteristics of the Pd/n-Si Schottky barrier structure is carried out. It is observed that the interface barrier parameters (ideality factor, Schottky barrier height and reverse saturation current) are a strong function of ion fluence. The voltage dependence of the conduction mechanisms indicates the presence of defects near the interface as well as in bulk silicon. The energy loss mechanisms of energetic ions in the Pd/n-Si structure are used to explain the observed results after irradiation.
Neetika, Sandeep Kumar, Amit Sanger, Hemant K. Chourasiya, Ashish Kumar, K. Asokan, Ramesh Chandra, and V.K. Malik
Elsevier BV
Hemant K. Chourasiya, P.K. Kulriya, Neeraj Panwar, and Sandeep Kumar
Elsevier BV