Vivek Garg

Scopus Publications

Unveiling the photovoltaic potential of β-AgBiS2 for flexible solar cell applications: A DFT-Based investigation
Dhruv Singh Thakur, Rajesh Kumar Sharma, Vivek Garg
Materials Today Chemistry, 2026
Engineered earth abundant Cu2BaSn(S,Se)4 thin films for indoor energy harvesting
Hitarth Narsi Patel, Rajesh Kumar Sharma, Deepak Joshi, Vivek Garg
Solar Energy, 2026
Optimizing Carrier Dynamics and Charge Extraction in FA-Based Tin Perovskites Through Dominant Band Offset Engineering Over Doping
Rajesh K. Sharma, Hitarth N. Patel, Dhruv S. Thakur, Vivek Garg
IEEE Transactions on Electron Devices, 2026
Formamidinium tin iodide (FASnI3) is a promising lead-free perovskite absorber, but its performance is limited by Sn-related defect formation and interfacial recombination. We investigate carrier dynamics in an inverted device architecture (ITO/PEDOT:PSS/ FASnI3/C60/BCP/Ag) by systematically tuning transport-layer doping, band alignment, and contact energetics. Band offset engineering is identified as the primary efficiency determinant: optimized conduction band offset (CBO) at the absorber/electron transport layer (ETL) interface and valence band offset (VBO) at the hole transport layer (HTL)/absorber interface suppress nonradiative losses and enable a power conversion efficiency (PCE) of 25.79%. Doping in the practical range of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{18}}{\!}-{\!}10^{{20}}$</tex-math> </inline-formula> cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{-{3}}$</tex-math> </inline-formula> has minimal impact on PCE, although higher doping broadens the accessible CBM/VBM range, offering flexibility when selecting compatible transport-layer materials. To assess operational stability, Sn-related vacancy/interstitial defects and Sn<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{{2+}}$</tex-math> </inline-formula> oxidation pathways are explicitly incorporated. Light soaking initially passivates defects before prolonged illumination increases oxidation-induced vacancy density, while moisture and forward-bias accelerate trap formation following first-order defect evolution kinetics. These results demonstrate that both efficient carrier extraction and controlled suppression of Sn-defect evolution are essential for achieving high-performance, stable, and lead-free FASnI3 photovoltaics.
Advanced bandgap grading techniques for high-efficiency FA-based tin perovskite solar cells
Rajesh Kumar Sharma, Hitarth Narsi Patel, Dhruv Singh Thakur, Vivek Garg, Shivendra Yadav
Solar Energy Materials and Solar Cells, 2025
DFT-based accurate and efficient bandgap prediction of CsSnI3-xBrx and parameter optimization for enhanced perovskite solar cell performance
Dhruv Singh Thakur, Rajesh Kumar Sharma, Vivek Garg, Shivendra Yadav
Physica B Condensed Matter, 2025
Insights into the potential of Sb alloyed Cu2AgBiI6-based solar cells: For efficient indoor energy-harvesting
Abhishek Kumar, Gaurav Siddharth, Praveen Dwivedi, S. K. Pandey, B. S. Sengar, Vivek Garg
Solar Energy, 2025
Enhancement of Functionalized 1T-NbS2 Monolayer Properties for the Superior Anode of Na-Ion Batteries
Jasil T K, Ashish Kumar Yadav, Gyanendra Kumar Maurya, Vivek Garg, Sushil Kumar Pandey
IEEE Transactions on Nanotechnology, 2025
One of the most important factors influencing the performance of Na-ion batteries (NIBs) is the anode’s quality. Currently, NIB anodes have numerous disadvantages, including low capacity, rapid volume change, temperature variable conductivity and poor thermal/chemical stability. In this work, the electronic and transport properties of undoped, doped and defective 1T-NbS2 monolayers were investigated using density functional theory calculations. The maximum quantum capacitance of 1T-NbS2 with S-vacancy (VS-NbS2) changes from 20.49 to 16.92 μF/cm2 across temperature ranges of 200 K to 1000 K, indicating its suitability as anode with temperature-stable capacity. The 1T-NbS2 monolayers exhibit high electrical conductivity with less than 6% fluctuation across a temperature range of 200 K to 1000 K, indicating thermally stable conductance. The 1T-NbS2 layered structure has substantially larger interlayer spacing of 0.615 nm than the size of Na ion (0.095 nm), as well as a relatively tiny variation (0.05 eV for VS-NbS2) in cohesive energies between sodiated and de-sodiated phases, making it a good choice for anodes. For VS-NbS2, the seebeck coefficient ranges from -5 to -40 μV/K, which is often obtained by the most commonly used Na-metal anode, demonstrating its appropriateness as anode. According to our findings, 1T-NbS2 is a great option for thermally stable NIB electrode applications.
Investigating ASnI2Br wide bandgap tin perovskite for bifacial solar cells: Modeling of bifacial efficiency with comparative analysis
Rajesh Kumar Sharma, Hitarth Narsi Patel, Dhruv Singh Thakur, Vivek Garg, Shivendra Yadav
Solar Energy, 2024
Unveiling the Potential of Cs3Sb2ClxI9-x-Based Solar Cells for Efficient Indoor Light Harvesting: Numerical Simulation
Sarita Manjhi, Gaurav Siddharth, Sushil K. Pandey, Brajendra S. Sengar, Vivek Garg
Advanced Theory and Simulations, 2024
Lead‐free Perovskite‐inspired materials (PIM) have become the most promising candidate for indoor photovoltaics (IPV) because of their low toxicity and high performance. In this study, the potential of one of the lead‐free PIMs, Cesium antimony chloride iodide (Cs3Sb2ClxI9‐x), is explored for IPV devices. Recent experimental research work on a Cs3Sb2ClxI9‐x− based solar cell with a power conversion efficiency (PCE) of 3.7% is considered for the baseline model development. The device performance is further optimized by investigating 1) absorber thickness and defect density, 2) band alignment of Electron Transport Layer (ETL)/Absorber, ETL Doping concentration and absorber/ETL interface defect density, 3) band alignment of Hole Transport Layer (HTL)/Absorber, HTL Doping concentration, and absorber/HTL interface defect density, 4) work function of metal contacts, 5) series and shunt resistances. After device optimization, the simulated device under 1000 lux WLED is able to achieve Jsc, Voc, FF, and PCE of 1.8 mA cm−2, 1.46 V, 89.3%, and 45.05%, respectively. Further, an evaluation of the performance of the optimized device under various indoor light sources, including White Light Emitting Diode (WLED), halogen, and Compact Fluorescent Lamp (CFL), is conducted in order to assess its performance under widely utilized lighting conditions.
Exploring Multi-Level ETL and HTL Configurations for High-Efficiency Lead-Free Cs2AgBiBr6 Double Perovskite Solar Cells: A Design and Simulation Study
Vipul Vaibhav Mishra, Anuj Kumar Sharma, Gaurav Siddharth, Vivek Garg, Brajendra Singh Sengar
Energy Technology, 2024
Cs2AgBiBr6 is a promising lead‐free double perovskite solar cells (PSCs) material. Its full potential has yet to be realized due to issues with its large band gap and the optimization of the alignment of the electron transport layer (ETL) and hole transport layer (HTL). The photovoltaic performance of Cs2AgBiBr6‐based devices has been optimized using ZnO, IGZO, TiO2, WS2, PCBM, and C60 ETLs and Cu2O, CuScN, CuSbS2, NiO, P3HT, PEDOT: PSS, Spiro MeOTAD, CuI, CuO, V2O5, CBTS, and CFTS HTLs. It has been observed by simulation study that Cs2AgBiBr6‐based devices exhibit remarkably high photoconversion efficiency when combined with certain ETLs. To better understand the performance, we examine how the best device structures are affected by the absorber and ETL thickness, ETL carrier density, series and shunt resistance, generation, and recombination rate. The findings suggest that TiO2 and ZnO ETLs, in conjunction with CBTS HTL, exhibit good potential for producing high‐efficiency (η > 13%) Cs2AgBiBr6‐based heterojunction solar cells with an ITO/ETL/Cs2AgBiBr6/CBTS/Au device structure. Optimization of the valence band offset (VBO) at the CBTS/Cs2AgBiBr6 interface reveals that reduced VBO value has a beneficial impact on the performance of the solar cell. This modeling work gives a prospective route for manufacturing lead‐free Cs2AgBiBr6 PSCs.
Comprehensive Modeling of High-Performance All-Inorganic Cs2TiBr6-Based Perovskite Solar Cells
Sujit Kumar, Jasil Thiyyakkandy, Ashish Kumar Yadav, Valippurath Vinturaj, Vivek Garg, Sudheendra Prabhu, Sushil Kumar Pandey
Physica Status Solidi B Basic Research, 2024
A DFT study of the adsorption behavior and sensing properties of CO gas on monolayer MoSe2 in CO2-rich environment
V. P. Vinturaj, Ashish Kumar Yadav, Rohit Singh, Vivek Garg, Ritesh Bhardwaj, K. M. Ajith, Sushil Kumar Pandey
Journal of Molecular Modeling, 2024
Bandgap engineering of earth-abundant Cu2BaSn(S1-xSex)4 for photovoltaic application: A systematic approach to double grading
Hitarth Narsi Patel, Rajesh Kumar Sharma, Deepak Joshi, Vivek Garg
Solar Energy Materials and Solar Cells, 2024
Elucidating the Potential Strategies for Performance Improvement of CBTSSe-Based Solar Cells: A Pathway Toward 20% Efficiency
Hitarth N. Patel, Rajesh K. Sharma, Deepak Joshi, Vivek Garg
Energy Technology, 2024
Unraveling the Potential Pathways for Improved Performance of EDA0.01(GA0.06(FA0.8Cs0.2)0.94)0.98SnI2Br-Based Solar Cells
Rajesh K. Sharma, Hitarth N. Patel, Vivek Garg, Shivendra Yadav
Energy Technology, 2024
DFT Calculations for Temperature Stable Quantum Capacitance of VS2 Based Electrodes for Supercapacitors
Ashish Kumar Yadav, Shreevathsa N S, Rohit Singh, Partha Pratim Das, Vivek Garg, Sushil Kumar Pandey
IEEE Transactions on Nanotechnology, 2024
Impact of S/D Extension Length and Sheet Stacking on Transient Behavior of Nanosheet FETs
Shobhit Srivastava, Sachin Doge, Sourabh Panwar, Shashidhara M, Vivek Garg, Shivendra Yadav, Lomash Chandra, Abhishek Acharya
Proceedings IEEE International Symposium on Circuits and Systems, 2024
Performance assessment of pocket tunnel FET and accumulation mode FET for detection of streptavidin protein
Akash Jadhav, Shivendra Yadav, Sushil K Pandey, Vivek Garg, Praveen Dwivedi
Physica Scripta, 2023
Unveiling the Potential of Bismuth Oxy-Iodide (BiOI)-Based Photovoltaic Device for Indoor Light Harvesting
Sarita Manjhi, Gaurav Siddharth, Sushil K. Pandey, Brajendra S. Sengar, Praveen Dwivedi, Vivek Garg
IEEE Transactions on Electron Devices, 2023
DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High-Efficiency Infrared Photodetector
Bikash Bhandari, Ashish Kumar Yadav, Rohit Singh, G. Kiran, Amit Kumar Singh, Vivek Garg, Sushil Kumar Pandey
Physica Status Solidi B Basic Research, 2023
Effect of Introducing Defects and Doping on Different Properties of Monolayer MoS2
Kumari Prajakta, V. P. Vinturaj, Rohit Singh, Vivek Garg, Saurabh Kumar Pandey, Sushil Kumar Pandey
Physica Status Solidi B Basic Research, 2023
Theoretical investigation of electronic and optical properties of doped and defective MoSe2 monolayers
V P Vinturaj, Ashish Kumar Yadav, T K Jasil, G Kiran, Rohit Singh, Amit Kumar Singh, Vivek Garg, Sushil Kumar Pandey
Bulletin of Materials Science, 2023
Comparative analysis of gate structure dependent FET-based biosensor
Deepak Singh, Brajendra S. Sengar, Praveen Dwivedi, Vivek Garg
Materials Today Communications, 2023
Growth optimization and DFT investigation of doping effect on properties of VS2 monolayer crystals
Ashish Kumar Yadav, Chandrabhan Patel, G. Kiran, Rohit Singh, Amit Kumar Singh, Vivek Garg, Shaibal Mukherjee, Sushil Kumar Pandey
European Physical Journal B, 2023
Design Investigation of Charge Plasma Tunnel FET with Vertical Source
Shivendra Yadav, Adarsh Singh Niranjan, Vivek Garg
Silicon, 2022
Design Analysis of Ohmic Junction Based Tunnel FET
Shivendra Yadav, Mohammad Aslam, Vivek Garg, Pallerla Joseph Ritesh Reddy
Silicon, 2022
Recent advancements in growth and stability of phosphorene: Prospects for high-performance devices
Sushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, Amitesh Kumar
Sub Micron Semiconductor Devices Design and Applications, 2022
Numerical simulation of novel lead-free Cs3Sb2Br9 absorber-based highly efficient perovskite solar cell
Sachchidanand, Vivek Garg, Anil Kumar, Pankaj Sharma
Optical Materials, 2021
Insights into the sputter-instigated valence plasmon oscillations in CIGSe thin films
Vivek Garg, Brajendra S. Sengar, Gaurav Siddharth, Shailendra Kumar, Victor V. Atuchin, Shaibal Mukherjee
Surfaces and Interfaces, 2021
A model development of lead-free Cs3Sb2Br9based novel perovskite solar cell by SCAPS-1D
Sachchidanand, Vivek Garg, Anil Kumar, Pankaj Sharma
Conference Record of the IEEE Photovoltaic Specialists Conference, 2021
Improving the Cu2ZnSn(S,Se)4-Based Photovoltaic Conversion Efficiency by Back-Contact Modification
Brajendra S. Sengar, Vivek Garg, Gaurav Siddharth, Amitesh Kumar, Sushil Kumar Pandey, Mayank Dubey, Victor V. Atuchin, Shailendra Kumar, Shaibal Mukherjee
IEEE Transactions on Electron Devices, 2021
Numerical Simulation: Design of High-Efficiency Planar p-n Homojunction Perovskite Solar Cells
Brajendra S. Sengar, Vivek Garg, Amitesh Kumar, Praveen Dwivedi
IEEE Transactions on Electron Devices, 2021
A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor
Praveen Dwivedi, Rohit Singh, Brajendra Singh Sengar, Amitesh Kumar, Vivek Garg
IEEE Sensors Journal, 2021
Progress in Thin Film Solar Cell and Advanced Technologies for Performance Improvement
Gaurav Siddharth, Vivek Garg, Brajendra S. Sengar, Shaibal Mukherjee
Encyclopedia of Smart Materials, 2021
Investigation of DIBS-Deposited CdZnO/ZnO-Based Multiple Quantum Well for Large-Area Photovoltaic Application
Gaurav Siddharth, Ruchi Singh, Vivek Garg, Brajendra S. Sengar, Mangal Das, Biswajit Mandal, Myo Than Htay, Mukul Gupta, Shaibal Mukherjee
IEEE Transactions on Electron Devices, 2020
Impact of back-gate voltage on sensing metric of dielectric modulated Tunnel FET biosensor
Praveen Dwivedi, Amitesh Kumar, Brajendra S. Sengar, Vivek Garg, Rohit Singh
2020 International Conference on Emerging Frontiers in Electrical and Electronic Technologies Icefeet 2020, 2020
Effect of applied bias on Schottky interface to affect resistive switching in a memristive device
Amitesh Kumar, Praveen Dwivedi, Brajendra S. Sengar, Vivek Garg, Rohit Singh
2020 International Conference on Emerging Frontiers in Electrical and Electronic Technologies Icefeet 2020, 2020
Analytical Performance Analysis of CdZnO/ZnO-Based Multiple Quantum Well Solar Cell
Gaurav Siddharth, Brajendra S. Sengar, Vivek Garg, Md Arif Khan, Ruchi Singh, Shaibal Mukherjee
IEEE Transactions on Electron Devices, 2020
Analytical Study of Performance Parameters of InGaN/GaN Multiple Quantum Well Solar Cell
Gaurav Siddharth, Vivek Garg, Brajendra S. Sengar, Ritesh Bhardwaj, Pawan Kumar, Shaibal Mukherjee
IEEE Transactions on Electron Devices, 2019
Resistive switching in reactive electrode-based memristor: Engineering bulk defects and interface inhomogeneity through bias characteristics
Amitesh Kumar, Mangal Das, Pankaj Sharma, Vivek Garg, Brajendra S Sengar, Arabinda Barman, Aloke Kanjilal, Abhinav Kranti, Shaibal Mukherjee
Semiconductor Science and Technology, 2019
Investigation of valence electron excitation and plasmonic enhancement in sputter grown NMZO thin films: For energy harvesting applications
Vivek Garg, Brajendra S. Sengar, Vishnu Awasthi, Amitesh Kumar, Sushil K. Pandey, Shailendra Kumar, Mukul Gupta, Shaibal Mukherjee
Optical Materials, 2019
Investigation of valence plasmon excitations in GMZO thin film and their suitability for plasmon-enhanced buffer-less solar cells
Vivek Garg, Brajendra S. Sengar, Amitesh Kumar, Gaurav Siddharth, Shailendra Kumar, Shaibal Mukherjee
Solar Energy, 2019
Evaluation of ga:Mgzno/cigse heterojunction for realization of all sputtered buffer-less solar cell
Vivek Garg, Brajendra S. Sengar, Nisheka Anadkat, Gaurav Siddharth, Shailendra Kumar, Shaibal Mukherjee
Springer Proceedings in Physics, 2019
Sputter-instigated plasmon-enhanced optical backscattering layer in ultrathin solar cells: Application of GZO in CIGSe material system
Vivek Garg, Brajendra S. Sengar, Pankaj Sharma, Amitesh Kumar, Aaryashree, Shailendra Kumar, Shaibal Mukherjee
Solar Energy, 2018
Band alignment of Cd-free (Zn, Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties
Brajendra S. Sengar, Vivek Garg, Amitesh Kumar, Vishnu Awasthi, Shailendra Kumar, Victor V. Atuchin, Shaibal Mukherjee
Optical Materials, 2018
Surface layer investigation of dual ion beam sputtered Cu2ZnSn(S,Se)4 thin film for open circuit voltage improvement
Brajendra S Sengar, Vivek Garg, Amitesh Kumar, Shailendra Kumar, Shaibal Mukherjee
Journal of Physics D Applied Physics, 2018
Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO
Vivek Garg, Brajendra S. Sengar, Vishnu Awasthi, Amitesh Kumar, Rohit Singh, Shailendra Kumar, C. Mukherjee, V. V. Atuchin, Shaibal Mukherjee
ACS Applied Materials and Interfaces, 2018
Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering
Amitesh Kumar, Mangal Das, Vivek Garg, Brajendra S. Sengar, Myo Than Htay, Shailendra Kumar, Abhinav Kranti, Shaibal Mukherjee
Applied Physics Letters, 2017
Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering
Pankaj Sharma, Aaryashree, Vivek Garg, Shaibal Mukherjee
Journal of Applied Physics, 2017
Impact of sputter-instigated plasmonic features in TCO films: For ultrathin photovoltaic applications
Vishnu Awasthi, Vivek Garg, Brajendra S. Sengar, Sushil Kumar Pandey, Aaryashree, Shailendra Kumar, C. Mukherjee, Shaibal Mukherjee
Applied Physics Letters, 2017
Growth and characterization of dual ion beam sputtered Cu2ZnSn(S, Se)4 thin films for cost-effective photovoltaic application
Brajendra S. Sengar, Vivek Garg, Vishnu Awasthi, Aaryashree, Shailendra Kumar, C. Mukherjee, Mukul Gupta, Shaibal Mukherjee
Solar Energy, 2016
Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact
Rohit Singh, Pankaj Sharma, Md Arif Khan, Vivek Garg, Vishnu Awasthi, Abhinav Kranti, Shaibal Mukherjee
Journal of Physics D Applied Physics, 2016
Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface
Vishnu Awasthi, Vivek Garg, Brajendra S. Sengar, Rohit Singh, Sushil Kumar Pandey, Shailendra Kumar, C. Mukherjee, Shaibal Mukherjee
2016 Compound Semiconductor Week Csw 2016 Includes 28th International Conference on Indium Phosphide and Related Materials Iprm and 43rd International Symposium on Compound Semiconductors Iscs 2016, 2016
Plasmon generation in sputtered Ga-doped MgZnO thin films for solar cell applications
Vishnu Awasthi, Sushil Kumar Pandey, Vivek Garg, Brajendra S. Sengar, Pankaj Sharma, Shailendra Kumar, C. Mukherjee, Shaibal Mukherjee
Journal of Applied Physics, 2016
Localized surface plasmon resonance on Au nanoparticles: Tuning and exploitation for performance enhancement in ultrathin photovoltaics
Vivek Garg, Brajendra S. Sengar, Vishnu Awasthi, Aaryashree Aaryashree, Pankaj Sharma, C. Mukherjee, Shailendra Kumar, Shaibal Mukherjee
Rsc Advances, 2016
Detection of bioanalyte using porous silicon based optical biosensor
Journal of Optoelectronics and Advanced Materials, 2015
Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications
Sushil Kumar Pandey, Vishnu Awasthi, Brajendra Singh Sengar, Vivek Garg, Pankaj Sharma, Shailendra Kumar, C. Mukherjee, Shaibal Mukherjee
Journal of Applied Physics, 2015
Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector
Pankaj Sharma, Rohit Singh, Vishnu Awasthi, Sushil K. Pandey, Vivek Garg, Shaibal Mukherjee
Rsc Advances, 2015

RECENT SCHOLAR PUBLICATIONS

Unveiling the photovoltaic potential of β-AgBiS2 for flexible solar cell applications: A DFT-Based investigation
DS Thakur, RK Sharma, V Garg
Materials Today Chemistry 53, 103488 , 2026
2026
Engineered earth abundant Cu2BaSn (S, Se) 4 thin films for indoor energy harvesting
HN Patel, RK Sharma, D Joshi, V Garg
Solar Energy 308, 114398 , 2026
2026
Optimizing Carrier Dynamics and Charge Extraction in FA-Based Tin Perovskites Through Dominant Band Offset Engineering Over Doping
RK Sharma, HN Patel, DS Thakur, V Garg
IEEE Transactions on Electron Devices , 2026
2026
Advanced bandgap grading techniques for high-efficiency FA-based tin perovskite solar cells
RK Sharma, HN Patel, DS Thakur, V Garg, S Yadav
Solar Energy Materials and Solar Cells 292, 113791 , 2025
2025
Citations: 2
Enhancement of Functionalized 1T-NbS2 Monolayer Properties for the Superior Anode of Na-ion Batteries
TK Jasil, AK Yadav, GK Maurya, V Garg, SK Pandey
IEEE Transactions on Nanotechnology , 2025
2025
Insights into the potential of Sb alloyed Cu2AgBiI6-based solar cells: for efficient indoor energy-harvesting
A Kumar, G Siddharth, P Dwivedi, SK Pandey, BS Sengar, V Garg
Solar Energy 286, 113188 , 2025
2025
Citations: 7
DFT-based accurate and efficient bandgap prediction of CsSnI3-xBrx and parameter optimization for enhanced perovskite solar cell performance
DS Thakur, RK Sharma, V Garg, S Yadav
Physica B: Condensed Matter 697, 416693 , 2025
2025
Citations: 11
Investigating ASnI2Br wide bandgap tin perovskite for bifacial solar cells: Modeling of bifacial efficiency with comparative analysis
RK Sharma, HN Patel, DS Thakur, V Garg, S Yadav
Solar Energy 283, 113017 , 2024
2024
Citations: 4
A DFT study of the adsorption behavior and sensing properties of CO gas on monolayer MoSe 2 in CO 2 -rich environment
VP Vinturaj, AK Yadav, R Singh, V Garg, R Bhardwaj, KM Ajith, ...
Journal of Molecular Modeling 30 (8), 250 , 2024
2024
Citations: 12
Bandgap engineering of earth-abundant Cu2BaSn (S1-xSex) 4 for photovoltaic application: A systematic approach to double grading
HN Patel, RK Sharma, D Joshi, V Garg
Solar Energy Materials and Solar Cells 269, 112792 , 2024
2024
Citations: 5
Impact of S/D Extension Length and Sheet Stacking on Transient Behavior of Nanosheet FETs
S Srivastava, S Doge, S Panwar, V Garg, S Yadav, L Chandra, A Acharya
2024 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4 , 2024
2024
Citations: 3
DFT Calculations for Temperature Stable Quantum Capacitance of VS 2 Based Electrodes for Supercapacitors
AK Yadav, NS Shreevathsa, R Singh, PP Das, V Garg, SK Pandey
IEEE Transactions on Nanotechnology 23, 132-138 , 2024
2024
Citations: 11
Exploring Multi‐Level ETL and HTL Configurations for High‐Efficiency Lead‐Free Cs2AgBiBr6 Double Perovskite Solar Cells: A Design and Simulation Study
VV Mishra, AK Sharma, G Siddharth, V Garg, BS Sengar
Energy Technology, 2400578 , 2024
2024
Citations: 11
Comprehensive Modeling of High‐Performance All‐Inorganic Cs2TiBr6‐Based Perovskite Solar Cells
S Kumar, J Thiyyakkandy, AK Yadav, V Vinturaj, V Garg, S Prabhu, ...
Physica status solidi (b), 2400247 , 2024
2024
Citations: 6
Unveiling the Potential of Cs3Sb2ClxI9‐x‐Based Solar Cells for Efficient Indoor Light Harvesting: Numerical Simulation
S Manjhi, G Siddharth, SK Pandey, BS Sengar, V Garg
Advanced Theory and Simulations, 2400128 , 2024
2024
Citations: 7
Elucidating the Potential Strategies for Performance Improvement of CBTSSe‐Based Solar Cells: A Pathway Toward 20% Efficiency
HN Patel, RK Sharma, D Joshi, V Garg
Energy Technology, 2301198 , 2024
2024
Citations: 8
Unraveling the Potential Pathways for Improved Performance of EDA0. 01 (GA0. 06 (FA0. 8Cs0. 2) 0.94) 0.98 SnI2Br‐Based Solar Cells
RK Sharma, HN Patel, V Garg, S Yadav
Energy Technology, 2300876 , 2024
2024
Citations: 6
Performance assessment of pocket tunnel FET and accumulation mode FET for detection of streptavidin protein
A Jadhav, S Yadav, SK Pandey, V Garg, P Dwivedi
Physica Scripta 98 (11), 115002 , 2023
2023
Citations: 8
Unveiling the potential of bismuth oxy-iodide (BiOI)-based photovoltaic device for indoor light harvesting
S Manjhi, G Siddharth, SK Pandey, BS Sengar, P Dwivedi, V Garg
IEEE Transactions on Electron Devices 70 (11), 5690-5695 , 2023
2023
Citations: 7
Theoretical investigation of electronic and optical properties of doped and defective MoSe 2 monolayers
VP Vinturaj, AK Yadav, TK Jasil, G Kiran, R Singh, AK Singh, V Garg, ...
Bulletin of Materials Science 46 (3), 121 , 2023
2023
Citations: 21

MOST CITED SCHOLAR PUBLICATIONS

Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering
A Kumar, M Das, V Garg, BS Sengar, MT Htay, S Kumar, A Kranti, ...
Applied Physics Letters 110 (25) , 2017
2017
Citations: 110
Band alignment of Cd-free (Zn, Mg) O layer with Cu2ZnSn (S, Se) 4 and its effect on the photovoltaic properties
BS Sengar, V Garg, A Kumar, V Awasthi, S Kumar, VV Atuchin, ...
Optical Materials 84, 748-756 , 2018
2018
Citations: 81
A new simulation approach of transient response to enhance the selectivity and sensitivity in tunneling field effect transistor-based biosensor
P Dwivedi, R Singh, BS Sengar, A Kumar, V Garg
IEEE Sensors Journal 21 (3), 3201-3209 , 2020
2020
Citations: 80
Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: A case study of GZO.
V Garg, BS Sengar, V Awasthi, A kumar, R Singh, S Kumar, C Mukherjee, ...
ACS Applied Materials & Interfaces , 2018
2018
Citations: 66
Numerical simulation: design of high-efficiency planar pn homojunction perovskite solar cells
BS Sengar, V Garg, A Kumar, P Dwivedi
IEEE Transactions on Electron Devices 68 (5), 2360-2364 , 2021
2021
Citations: 60
Localized surface plasmon resonance on Au nanoparticles: tuning and exploitation for performance enhancement in ultrathin photovoltaics
V Garg, BS Sengar, V Awasthi, P Sharma, C Mukherjee, S Kumar, ...
RSC advances 6 (31), 26216-26226 , 2016
2016
Citations: 53
Numerical simulation of novel lead-free Cs3Sb2Br9 absorber-based highly efficient perovskite solar cell
V Garg, A Kumar, P Sharma
Optical Materials 122, 111715 , 2021
2021
Citations: 46
Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact
R Singh, P Sharma, MA Khan, V Garg, V Awasthi, A Kranti, S Mukherjee
Journal of Physics D: Applied Physics 49 (44), 445303 , 2016
2016
Citations: 46
Growth and characterization of dual ion beam sputtered Cu2ZnSn (S, Se) 4 thin films for cost-effective photovoltaic application
BS Sengar, V Garg, V Awasthi, S Kumar, C Mukherjee, M Gupta, ...
Solar Energy 139, 1-12 , 2016
2016
Citations: 33
Improving the Cu 2 ZnSn(S,Se) 4 -Based Photovoltaic Conversion Efficiency by Back-Contact Modification
BS Sengar, V Garg, G Siddharth, A Kumar, SK Pandey, M Dubey, ...
IEEE Transactions on Electron Devices 68 (6), 2748-2752 , 2021
2021
Citations: 29
Plasmon generation in sputtered Ga-doped MgZnO thin films for solar cell applications
V Awasthi, SK Pandey, V Garg, BS Sengar, P Sharma, S Kumar, ...
Journal of applied physics 119 (23) , 2016
2016
Citations: 29
Detection of a high photoresponse at zero bias from a highly conducting ZnO: Ga based UV photodetector
P Sharma, R Singh, V Awasthi, SK Pandey, V Garg, S Mukherjee
RSC advances 5 (104), 85523-85529 , 2015
2015
Citations: 28
Analytical study of performance parameters of InGaN/GaN multiple quantum well solar cell
G Siddharth, V Garg, BS Sengar, R Bhardwaj, P Kumar, S Mukherjee
IEEE Transactions on Electron Devices 66 (8), 3399-3404 , 2019
2019
Citations: 24
Theoretical investigation of electronic and optical properties of doped and defective MoSe 2 monolayers
VP Vinturaj, AK Yadav, TK Jasil, G Kiran, R Singh, AK Singh, V Garg, ...
Bulletin of Materials Science 46 (3), 121 , 2023
2023
Citations: 21
Investigation of DIBS-deposited CdZnO/ZnO-based multiple quantum well for large-area photovoltaic application
G Siddharth, R Singh, V Garg, BS Sengar, M Das, B Mandal, MT Htay, ...
IEEE Transactions on Electron Devices 67 (12), 5587-5592 , 2020
2020
Citations: 21
Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering
P Sharma, V Garg, S Mukherjee
Journal of Applied Physics 121 (22) , 2017
2017
Citations: 20
Impact of sputter-instigated plasmonic features in TCO films: for ultrathin photovoltaic applications
V Awasthi, V Garg, BS Sengar, SK Pandey, S Kumar, C Mukherjee, ...
Applied Physics Letters 110 (10) , 2017
2017
Citations: 17
Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications
SK Pandey, V Awasthi, BS Sengar, V Garg, P Sharma, S Kumar, ...
Journal of applied physics 118 (16) , 2015
2015
Citations: 17
Investigation of valence plasmon excitations in GMZO thin film and their suitability for plasmon-enhanced buffer-less solar cells
V Garg, BS Sengar, A Kumar, G Siddharth, S Kumar, S Mukherjee
Solar Energy 178, 114-124 , 2019
2019
Citations: 16
Sputter-instigated plasmon-enhanced optical backscattering layer in ultrathin solar cells: Application of GZO in CIGSe material system
V Garg, BS Sengar, P Sharma, A Kumar, S Kumar, S Mukherjee
Solar Energy 174, 35-44 , 2018
2018
Citations: 14

Vivek Garg

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