I am a postdoctoral researcher at LAPLACE Laboratory / Toulouse INP, specializing in the reliability and failure mechanisms of microelectronic modules under extreme conditions using advanced multiphysics simulations. My work combines physicochemical analysis, microstructural damage modeling, and FEM to enhance high-reliability power electronics.
In my current role, I developed a 2D electrothermal-metallurgical-elastoplastic model in COMSOL to simulate short-circuit events in SiC MOSFETs, predicting failure thresholds and improving device protection. Experimental validation confirmed the model’s accuracy in crack initiation and aging.
I hold a Ph.D. from ENS Paris-Saclay University (2022), where I studied crack progression in IGBT components using microstructural analysis and cohesive zone modeling. I also earned a Master’s and Bachelor’s in Physical & Materials Chemistry from Lebanese University.
EDUCATION
Doctor of Philosophy - PhD from École normale supérieure Paris-Saclay University, Electrical and Electronics Engineering
A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited) Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau IEEE International Reliability Physics Symposium Proceedings, 2024 As a follow-up to our previous work, the 2D transient Multiphysics electrothermal-mechanical and metallurgical model of a 1.2kV-80mΩ gate-planar SiC MOSFET power chip in a single FEM software, created previously by the authors, has been developed. This model aims to quantify the short-circuit (SC) critical time and energy density of attaining the local dielectric interlayer (ILD) strength and the Al source-metal solidus-liquidus phase transition at elevated temperatures. The novelty of this extended model is considering non-linear electrothermal and elastoplastic material property laws over a wide range of temperatures. Repetitive experimental SC events were carried out to verify the gate-aging occurrence in accordance with the critical values extracted from the proposed model.
Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics M. Shqair, Z. Khatir, A. Ibrahim, M. Berkani, A. Halouani, et al. 2022 23rd International Conference on Thermal Mechanical and Multi Physics Simulation and Experiments in Microelectronics and Microsystems Eurosime 2022, 2022 Insulated-gate bipolar transistors (IGBTs) are widely used components in power electronics applications. Upon operation, the difference in thermal expansion coefficients of materials composing the upper metallic parts causes thermal fatigue. The latter leads to degradations at metallic topside interconnections through the formation of cracks [1]. This paper focuses on a new physicochemical-microstructural approach for modeling the crack propagation at the contact interface between wires and metallization layers in a power module to answer the following question: what is the preferential crack path along with the interface, and what are the influencing parameters? The model is based on a cohesive zone model (CZM) approach [2] in the vicinity of the contact, used for predicting the crack propagation pathway in a small interfacial region on either sides of a contact. To achieve such predictability, CZM parameters are linked to physicochemical-microstructural properties, i.e., the crack propagation is interpreted at the metallic contact zone based on this linkage. Therefore, this work’s originality lies in combining a fracture mechanics approach and a physicochemical-microstructural one.
RECENT SCHOLAR PUBLICATIONS
In-depth 2D FEM analysis of gate cracking in SiC MOSFETs under repetitive short-circuit conditions: Application of a damage-based model for crack length prediction M Shqair, E Sarraute, F Richardeau Microelectronics Reliability 177, 116005 , 2026 2026
Thermomechanical simulation of SiC MOSFETs under Extreme Short-Circuit Stress: A 2D multiphysics damage and failure analysis [POSTER] M Shqair, E Sarraute, F Richardeau Comsol Conference , 2025 2025
First Comprehensive 2D Thermomechanical Modeling Of SiC MOSFETs Under Extreme Short-Circuit Stress M Shqair, E Sarraute, F Richardeau Comsol Conference , 2025 2025
Preliminary 2D elastoplastic modeling of gate cracking in SiC MOSFETs under short-circuit conditions across a wide temperature-range using rankine's damage energetic approach M Shqair, E Sarraute, F Richardeau Microelectronics Reliability 170, 115757 , 2025 2025 Citations: 3
Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D Simulation M Shqair, E Sarraute, F Richardeau 35th European Symposium on Reliability of Electron Devices, Failure Physics … , 2024 2024
Transient thermal 2D FEM analysis of SiC MOSFET in short-circuit operation including high-temperature material laws and phase transition of aluminum source electrode M Shqair, E Sarraute, T Cazimajou, F Richardeau Microelectronics Reliability 159, 115440 , 2024 2024 Citations: 4
A full transient electrothermal-elastoplastic mechanical and metallurgical 2D FEM of SiC MOSFET for gate-region stress investigation under short-pulse short-circuit M Shqair, E Sarraute, F Richardeau 2024 IEEE International Reliability Physics Symposium (IRPS), 7B. 2-1-7B. 2-8 , 2024 2024 Citations: 4
Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM M Shqair, E Sarraute, T Cazimajou, F Richardeau Microelectronics Reliability 150, 115081 , 2023 2023 Citations: 8
An EBSD Study of Fatigue Crack Propagation in Bonded Aluminum Wires Cycled from 55° C to 85° C: A. Halouani et al. A Halouani, Z Khatir, M Shqair, A Ibrahim, PY Pichon Journal of Electronic Materials 51 (12), 7353-7365 , 2022 2022 Citations: 12
Physicochemical and microstructural approaches for modeling the degradations of power electronic component interconnection M Shqair Université Paris-Saclay , 2022 2022 Citations: 2
Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling M Shqair, Z Khatir, A Ibrahim, A Halouani, M Berkani Microelectronics Reliability 138, 114635 , 2022 2022 Citations: 6
Finite elements analyses of early-stage crack propagation in aluminum wire bonds due to power cycling A Halouani, M Shqair, Z Khatir, A Ibrahim, M Ouhab Microelectronics Reliability, 114610 , 2022 2022 Citations: 8
A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices M Shqair, Z Khatir, A Ibrahim, M Berkani, A Halouani, T Hamieh Microelectronics Reliability 132, 114516 , 2022 2022 Citations: 9
Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics M Shqair, Z Khatir, A Ibrahim, M Berkani, A Halouani, T Hamieh 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics … , 2022 2022 Citations: 1
MOST CITED SCHOLAR PUBLICATIONS
An EBSD Study of Fatigue Crack Propagation in Bonded Aluminum Wires Cycled from 55° C to 85° C: A. Halouani et al. A Halouani, Z Khatir, M Shqair, A Ibrahim, PY Pichon Journal of Electronic Materials 51 (12), 7353-7365 , 2022 2022 Citations: 12
A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices M Shqair, Z Khatir, A Ibrahim, M Berkani, A Halouani, T Hamieh Microelectronics Reliability 132, 114516 , 2022 2022 Citations: 9
Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM M Shqair, E Sarraute, T Cazimajou, F Richardeau Microelectronics Reliability 150, 115081 , 2023 2023 Citations: 8
Finite elements analyses of early-stage crack propagation in aluminum wire bonds due to power cycling A Halouani, M Shqair, Z Khatir, A Ibrahim, M Ouhab Microelectronics Reliability, 114610 , 2022 2022 Citations: 8
Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling M Shqair, Z Khatir, A Ibrahim, A Halouani, M Berkani Microelectronics Reliability 138, 114635 , 2022 2022 Citations: 6
Transient thermal 2D FEM analysis of SiC MOSFET in short-circuit operation including high-temperature material laws and phase transition of aluminum source electrode M Shqair, E Sarraute, T Cazimajou, F Richardeau Microelectronics Reliability 159, 115440 , 2024 2024 Citations: 4
A full transient electrothermal-elastoplastic mechanical and metallurgical 2D FEM of SiC MOSFET for gate-region stress investigation under short-pulse short-circuit M Shqair, E Sarraute, F Richardeau 2024 IEEE International Reliability Physics Symposium (IRPS), 7B. 2-1-7B. 2-8 , 2024 2024 Citations: 4
Preliminary 2D elastoplastic modeling of gate cracking in SiC MOSFETs under short-circuit conditions across a wide temperature-range using rankine's damage energetic approach M Shqair, E Sarraute, F Richardeau Microelectronics Reliability 170, 115757 , 2025 2025 Citations: 3
Physicochemical and microstructural approaches for modeling the degradations of power electronic component interconnection M Shqair Université Paris-Saclay , 2022 2022 Citations: 2
Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics M Shqair, Z Khatir, A Ibrahim, M Berkani, A Halouani, T Hamieh 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics … , 2022 2022 Citations: 1
In-depth 2D FEM analysis of gate cracking in SiC MOSFETs under repetitive short-circuit conditions: Application of a damage-based model for crack length prediction M Shqair, E Sarraute, F Richardeau Microelectronics Reliability 177, 116005 , 2026 2026
Thermomechanical simulation of SiC MOSFETs under Extreme Short-Circuit Stress: A 2D multiphysics damage and failure analysis [POSTER] M Shqair, E Sarraute, F Richardeau Comsol Conference , 2025 2025
First Comprehensive 2D Thermomechanical Modeling Of SiC MOSFETs Under Extreme Short-Circuit Stress M Shqair, E Sarraute, F Richardeau Comsol Conference , 2025 2025
Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D Simulation M Shqair, E Sarraute, F Richardeau 35th European Symposium on Reliability of Electron Devices, Failure Physics … , 2024 2024
