Prashant S Alegaonkar
@cup.edu.in
Associate Professor, Department of Physics, School of Basic Sciences
Central University of Punjab, Bathinda
EDUCATION
M. Sc., Ph.D.
RESEARCH, TEACHING, or OTHER INTERESTS
Physics and Astronomy, Materials Science, Surfaces and Interfaces, Engineering
Scopus Publications
Scopus Publications
Nabeel M. S. Kaawash, Devidas I. Halge, Vijaykiran N. Narwade, Mohammed Y. H. Thabit, Pooja M. Khanzode, Jagdish W. Dadge, Prashant S. Alegaonkar, and Kashinath A. Bogle
Wiley
This study demonstrates the development of an ultraviolet (UV)‐C photodetector (PD) fabricated using a surface‐passivated SnO2 thin film deposited via spray pyrolysis. This PD possesses an unprecedentedly fast response speed, with both rise time and decay time of 0.3 ms. Furthermore, even when subjected to a modest UV light intensity of 6 μW cm−2, the device shows a significantly high responsivity of 1500 A W−1, external quantum efficiency of 7 × 105%, and detectivity of 1013 Jones. When compared to previously reported SnO2‐based PDs, this device exhibits consistent performance over a long working time, which may be due to the suppression of surface vacancy defects via surface passivation, as observed from structural and optical measurements. This type of PDs has the potential to be useful in wide range of applications, including industrial sensing, medical diagnostics, and environmental monitoring.
Devidas Halge, Vijaykiran Narwade, Pooja Khanzode, Nabeel Kaawash, Prashant Alegaonkar, Janez Kovac, and Kashinath Bogle
Wiley
A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M.S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, and Kashinath A. Bogle
Elsevier BV
Navin S. Mathew, Raja Devangan, Navin Kumar, and Prashant S. Alegaonkar
Springer Nature Singapore
Ravi Pratap Singh, Pawanpreet Kour, Anu, Prashant S. Alegaonkar, and Kamlesh Yadav
Springer Nature Singapore
Manjima Sudheer, Pinki Rani, Shashikant P. Patole, and Prashant S. Alegaonkar
American Chemical Society (ACS)
Priyanka, Subrat Mohanty, Prashant S. Alegaonkar, and Himangshu B. Baskey
American Chemical Society (ACS)
Integrated frequency selective surface (IFSS) absorbers with larger bandwidth, effective reflection loss, polarization-insensitive characteristics, angular stability with compact/thin design, and ease of fabrication have captivated significant importance in stealth technology. Herein, we report on an IFSS absorber that has been designed, simulated, and implemented for manufacturing to achieve effective stealth properties. Initially, frequency selective surface (FSS) layers have been designed that comprise a closed centroid honeycomb structure surrounded with four annular hexagonal rings, splitted, alternatively, and enveloped with four L-shaped elements. The simulated pattern has been optimized on glass fabric for reflection loss (RC, dB) at a thickness of ∼0.1 mm by choosing sheet resistance of pattern 110 Ω/□. A FSS layer combined with interlayer lossy dielectric laminates (1.8 mm) and a carbon-fabric-reinforced-plastic ground has been simulated as an IFSS absorber. The performance of RC, in normal and angular configuration (0-60°), under transvers an electric/magnetic mode of polarization, including analysis of the displacement current, volume power loss distribution, and complex admittance has been carried on IFSS. Subsequently, the proposed absorber has been fabricated using customized carbon-based resistive ink imprinted on glass fabric by mask lithography compounded with laminates (a carbon black powder/epoxy composite) and ground. Their manufacturing details, including free space and anechoic chamber RC measurements, have been presented. The simulated and experimental RC performances of the absorber are found to be in good agreement, possessing minimal 10 dB reflection loss (90% absorption) with a sample thickness of 1.9 mm (0.05λL, where λL corresponds to a lower operating frequency), covering 76% fractional bandwidth in X and Ku bands. The proposed design architecture of the IFSS is ideally suitable for aerospace stealth platforms.
Rajender Reddy Banda, Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M.S. Kaawash, Mohammed Y.H. Thabit, Prashant S. Alegaonkar, and Kashinath A. Bogle
Elsevier BV
Nabeel M.S. Kaawash, Devidas I. Halge, Vijaykiran N. Narwade, Prashant S. Alegaonkar, and Kashinath A. Bogle
Elsevier BV
Suprava Sahoo, Krishna C. Tripathi, Himangshu Baskey, and Prashant S. Alegaonkar
Elsevier BV
Priyanka, Prashant S Alegaonkar, and Himangshu B Baskey
IEEE
We present the design of a wheel-shaped resistive frequency selective surface (RFSS) based ultra-broadband radar absorber working for 5.2.-18.7 GHz. The proposed absorber has been designed using customized resistive material having a surface resistance value of $270 \\Omega / \\square$, employing aerograde glass fiber reinforced plastics (GFRP) laminate as a substrate material. The bottom layer has been terminated using a carbon - fibre reinforced plastics (CFRP) layer, which acts as a ground plane. The proposed RFSS absorber has been implemented and simulated with the help of CST microwave studio; the simulation result shows a minimum 10 dB reflection loss (RC) in the designated frequency, which covers C, X, and Ku bands. Typical absorption characteristics show fractional bandwidth (FBW) of 113%, with $0.044 \\lambda \\mathrm{L}$ (where $\\lambda \\mathrm{L}$ is the cutoff wavelength at 10 dB) thickness. The simulated design has been implemented for fabrication and validated experimentally, showing a close mutual agreement. The proposed absorber is thin (2.5mm) in nature, polarization insensitive (0° −90°), possesses good angular stability (0° −50°), and is easy to fabricate using a customized substrate, which makes it a potential candidate for aerospace stealth design.
Diya Singh, Pinki Rani, Sayani Biswas, and Prashant S. Alegaonkar
Springer Nature Singapore
Sayani Biswas and Prashant S. Alegaonkar
CRC Press
Mohammed Y. H. Thabit, Nabeel M. S. Kaawash, Sumayya Begum, Devidas I. Halge, Vijaykiran N. Narwade, Prashant S. Alegaonkar, and Kashinath A. Bogle
IOP Publishing
Abstract This work demonstrates the development of a highly sensitive and fast infrared photodetector using a PbS thin film deposited using a simple and scalable method known as “spray pyrolysis”. An aqueous precursor solution was deposited on a glass substrate at 150 °C have a cubic phase of PbS. Silver electrodes with a 1 mm gap are drawn on the film to create photo-detector devices. Low resistive contact between the silver electrode and the PbS film is revealed from the linear I-V measurements performed in the dark and under light illumination. Under the illumination of a 100-watt tungsten lamp, the photo-responsivity, sensitivity, response time, and decay time of the PbS film were measured. The Ag/PbS/Ag photodetector device has a responsivity of 70 mA/W, a sensitivity of 200 at 30 V, and the best response and decay times of 6.4 and 15.6 ms, respectively. The photodetector device produced by this simple and low-cost fabrication method has a fast response and decay time.
Pinki Rani, Yogesh Jewariya, Krishna Kanta Haldar, Rathindranath Biswas, and Prashant S. Alegaonkar
Springer Science and Business Media LLC
Nabeel M.S. Kaawash, Devidas I. Halge, Vijaykiran N. Narwade, Prashant S. Alegaonkar, and Kashinath A. Bogle
Elsevier BV
Pinki Rani, Ashwini P. Alegaonkar, Rathindranath Biswas, Yogesh Jewariya, Krishna Kanta Haldar, and Prashant S. Alegaonkar
Frontiers Media SA
Graphical AbstractEffect of rGO doping in Tellurium tubes to achieve high electrochemical performance.
Nabeel M.S. Kaawash, Nubbh Kejriwal, Devidas I. Halge, Vijaykiran N. Narwade, Abhimanyu S. Rana, Jagdish W. Dadge, Suhas M. Jejurikar, Prashant S. Alegaonkar, and Kashinath A. Bogle
Elsevier BV
Pinki Rani, Ashwini P. Alegaonkar, Santosh K. Mahapatra, and Prashant S. Alegaonkar
Springer Science and Business Media LLC
We report on fabrication of tellurium nanostructures (TN) that demonstrated promising applications in optoelectronics. Initially, TN were synthesized using a simple, one-step, room temperature, wet-chemical technique. During synthesis, the effect of number of parameters such as precursor concentration, its content, solvent ratios, their pH and reaction time has been investigated at a temperature ~ 120 °C. The obtained product was examined by UV–visible, IR spectroscopy, X-ray diffractometry, electron microscopy and energy-dispersive X-ray spectroscopic characterization techniques. Analysis revealed that TN have profound impact on the structure–property relationship through active and passive participation of Mo catalyst. During its initial growth stages, Te and O bonding gets influenced by Mo to form Mo–O–Te–O and Te–Mo–Te moieties, typically, at 6 h. This has implication onto the structural phase transformation of TN from Te-tube (TT) to Te-flake (TF) and then to TT again. Possible transformation mechanism is explained. Structurally, TN had hexagonal quasi-crystalline atomic arrangement with morphologically thin, transparent, bunched and close-caped TT characteristics having diameter 50–100 nm and length 0.8–2.1 µm, whereas TF is found to be thin, geometrically squared with area ~ 7 to 10 µm 2 . On their implementation for optoelectronic assessments, over the wavelength range 0.3–2.1 µm (power density ~ 100 mW/cm 2 ), they showed peculiar luminescent and dark I – V responses. Relevant photocarrier dynamics has been revealed. TT, typically, showed 160% quantum efficiency, whereas TF ~ 40% is useful for optoelectronic devices. Details are presented. Graphical abstract Fabrication and optoelectronic assessments of tellurium nanostructure that showed time-dependent structural phase transformation from tube to flake to tube.
Muzahir Iqbal, Nilesh G. Saykar, Prashant S. Alegaonkar, and Santosh K. Mahapatra
Royal Society of Chemistry (RSC)
WS2@PANI nanocomposite prepared by hydrothermal and physical blending method shows remarkably high specific capacitance and energy density while retaining excellent cyclic stability.
Sayani Biswas and Prashant S. Alegaonkar
MDPI AG
Two-dimensional materials have secured a novel area of research in material science after the emergence of graphene. Now, a new family of 2D material-MXene is gradually growing and making itsmark in this field of study. MXenes since 2011 have been synthesized and experimented on in several ways.The HF treatment although successful poses some serious problems that gradually propelled the ideas of new synthesis methods. This review of the literature covers the major breakthroughs of MXene from the year of its discovery to recent endeavors, highlighting how the synthesis mechanisms have been developed over the years and also the importance of good characterization of data. Results and properties of this class of materials arealso briefly discussed alongwith recent advance in applications.
Akshita Yadav, Krishna C. Tripathi, Himangshu B. Baskey, and Prashant S. Alegaonkar
Elsevier BV
Ashwini P. Alegaonkar, Himangshu B. Baskey, and Prashant S. Alegaonkar
Royal Society of Chemistry (RSC)
Manipulating radar signatures by designing and architecting effective electromagnetic interference shield.
Ashwini P. Alegaonkar, Krishna C. Tripathi, Himangshu B. Baskey, Satish K. Pardeshi, and Prashant S. Alegaonkar
Wiley
R. K. Kalal, H. Shekhar, P. S. Alegaonkar, Rekha Sangtyani, and Arvind Kumar
Springer Singapore