Micro-structure modifications and assessment of radiation tolerance in W-doped In₂O₃ thin films exposed to high-dose gamma irradiation C. Aparna, M. G. Mahesha, N. Karunakara, I. Yashodhara, Pramoda Kumara Shetty Journal of Materials Science Materials in Electronics, 2025 This study focuses on investigating the radiation tolerance and dosimetric potential of tungsten-doped indium oxide (W:In₂O₃) thin films under high-dose gamma irradiation. The novelty of this work lies in the first systematic evaluation of gamma irradiation effects on the structural, optical and electrical properties of W:In₂O₃ thin films prepared by spray pyrolysis, which has not been previously explored. Nanostructured 2 at.% W-doped indium oxide thin film deposited using spray pyrolysis technique was irradiated with different gamma doses from 1 to 10 kGy. Structural analysis through XRD and Raman confirmed the stability of the crystalline phase even at higher doses, while subtle modifications indicated the presence of irradiation-induced point defects. The presence of oxygen vacancies was confirmed using structural, optical and electrical characterization, further supported by PL and XPS analysis. According to the XPS study, high doses of gamma radiation broke bonds rather than altering the oxidation states of the component elements. The materials’ applicability for dosimetric purposes is validated by the thermoluminescence it displayed after being exposed to radiation. Electrical characterization corroborated defect-assisted conduction, establishing strong correlation between structural disorder and transport behavior under irradiation. The study demonstrated that W-doped In₂O₃ thin films exhibit strong resistance to high doses of gamma radiation. The importance of this work lies in establishing W-doped In₂O₃ thin films as promising candidates for radiation-hardened electronics and reliable gamma dosimetry, crucial for applications in nuclear, aerospace, and medical environments.
Enhancement of gamma radiation sensitivity in tungsten-doped indium oxide thin films C. Aparna, M.G. Mahesha, N. Karunakara, I. Yashodhara, Pramoda Kumara Shetty Journal of Luminescence, 2025 This paper reports on enhancement of gamma sensitivity in indium oxide doped with tungsten. Using the spray pyrolysis process, the thin films are deposited on a heated glass substrate. Gamma doses ranging from 25, 50, 100 and 200 Gy were utilized. According to XRD analysis, the films showed a single-phase and polycrystalline cubic structure with (400) preferred orientation. FESEM was used to conduct morphological studies. The cubic crystalline structure of the deposits is further supported by the micro-Raman measurement. After irradiation, it was discovered that the optical bandgap shrank. The dominant process of defect generation is responsible for the rise in the photoluminescence peak intensities following gamma exposure. The irradiated film was studied for thermoluminescence and deconvolution of the experimental glow curve indicated the emergence of a new peak corresponding to the dopant along with the primary peak around 230 0 C. The elements contained in the sample are identified using XPS. The oxygen vacancies produced during gamma exposure determine the structural, optical, and electrical characteristics. The estimated sensitivities for applied voltages ranging from 1 V to 5 V fall within the range of 92.3 – 467.9 mA/cm 2 /Gy, exceeding both pristine and previously reported values.
Structural, optical, and electrical characteristics of gamma-irradiated Zn-doped indium oxide thin films for sensor applications C. Aparna, M.G. Mahesha, N. Karunakara, I. Yashodhara, Pramoda Kumara Shetty Optical Materials, 2025 Indium oxide (INO) thin film doped with 4 at% of zinc was synthesized using spray pyrolysis to study the impact of gamma irradiation on Zn doped indium oxide thin film for gamma dosimetry applications. The film thus deposited on substrate optimized at a temperature of 450 0 C was irradiated with four different doses of gamma radiation. The structural properties were enhanced after irradiation. The cubic phase of the material and the existence of oxygen vacancies were confirmed using Raman spectroscopy. PL spectral analysis confirmed the presence of oxygen vacancies. Zn-doped In 2 O 3 was indicated to be suitable for dosimetric purposes by the thermoluminescence study. XPS analysis confirms defect creation after irradiation. The resistivity of the sample decreased after irradiation. Zn-doped In 2 O 3 thin films show a notable enhancement in thermoluminescent (TL) response upon gamma irradiation, with a prominent glow peak near 250 °C and a linear response across doses from 25 to 200 Gy, demonstrating their suitability for gamma dosimetry applications. • No phase transformation after irradiation, demonstrating structural stability. • Study confirmes Gamma induced defects, such as oxygen vacancies. • The oxygen vacancies have a direct impact on the electrical and optical properties. • Reduced resistivity after gamma irradiation is linked to the generation of oxygen vacancies. • Thermoluminescence studies indicate enhanced efficiency for gamma dosimetry.
Comparison of radon and thoron concentration measuring systems among asian countries Miroslaw Janik, Shinji Tokonami, Kazuki Iwaoka, Naregundi Karunakara, Shetty Trilochana, Mandya Purushotham Mohan, Sudeep Kumara, Indaje Yashodhara, Weihai Zhuo, Chao Zhao, Fangdong Tang, Linfeng He, Supitcha Chanyotha, Chutima Kranrod, Darwish Al-Azmi, Osamu Kurihara International Journal of Environmental Research and Public Health, 2019
Natural radioactivity in Udupi and Karkala Taluks of coastal Karnataka Indian Journal of Pure and Applied Physics, 2010
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