Basavaprabhu G. Sheeparamatti
@becbgk.edu
Professor, Electronics and Communication Engineering
Basaveshwar Engineering College, Bagalkot
EDUCATION
B. E.(E & CE), M. Tech, Ph.D.
RESEARCH INTERESTS
Micro Electro Mechanical Systems, Embedded Systems
Scopus Publications
Scholar Citations
Scholar h-index
Scholar i10-index
Scopus Publications
Maheshwari S. Biradar, Basavaprabhu G. Sheeparamatti, and Pradeep Mitharam Patil
Springer Science and Business Media LLC
Maheshwari S. Biradar, P. M. Patil, and B. G. Sheeparamatti
Springer Singapore
M. Sutagundar, B.G. Sheeparamatti, and D.S. Jangamshetti
Bentham Science Publishers Ltd.
Objective: This paper presents a multi-objective design optimization of MEMS disk resonator using two techniques. Methods: Determining the optimized dimensions of disk resonator for a particular resonance frequency so as to achieve higher quality factor and lower motional resistance is attempted. One technique used is constraint-based multi-objective optimization using the interior-point algorithm. The second technique is based on multi-objective genetic algorithm. Results: The algorithms are implemented using MATLAB. The two techniques of optimization are compared. Conclusion: The developed optimization methods can provide faster design optimization compared to full-wave simulators resulting in significant reduction of design time.
B. G. Sheeparamatti and Kirankumar B. Balavalad
Springer Science and Business Media LLC
Micro sensors and actuators are widely used in this era. Micro pressure sensors are required in many applications and are the first sensors fabricated using MEMS technology. The work presents the fabrication of two micro pressure sensors viz., polysilicon on insulator (PolySOI) and amorphous silicon on insulator (a-SOI). Both sensors work on the principle of piezoresistive pressure sensing. The PolySOI sensor has a configuration Si-SiO2-polysilicon and the a-SOI sensor has Si-SiO2-a-silicon. The fabricated sensors consist of polysilicon and a-silicon piezoresistors. Nano-piezoresistors are patterned on the diaphragm to enhance the sensitivity and are connected in the form of a Wheatstone bridge. Both sensors are characterized for potential and sensitivity over a pressure range of 0–1 MPa. Two sensors exhibit high sensitivity, PolySOI sensor provides the sensitivity of 14.7 mV/bar (147 mV/MPa). Polycrystalline silicon is used as it has excellent mechanical properties and is compatible with high temperature processing and interfaces very well with thermally deposited SiO2. a-SOI sensor has a sensitivity of 10.5 mV/bar (105 mV/MPa). Both sensors are fabricated using conventional MEMS technology and with a silicon wafer. The sensors fabricated are alternate to the use of SOI wafer which is expensive and hard to customize.
Ajayakumar C Katageri and B G Sheeparamatti
IEEE
Piezoresistive pressure sensors works on the principle of piezoresistive effect of a material to detect strain when pressure is applied. To enhance the sensitivity and linearity of the device, generally the piezoresistive materials are connected in the form of a Wheatstone bridge circuit. For the design of a proposed model, silicon material is used for diaphragm and gold for connectors and carbon nanotubes (CNT) for piezoresistors, since CNTs have a high gauge factor. The proposed pressure sensor is designed and simulated using Comsol and Coventorware, and analyzed with respect to different parameters such as maximum displacement of the membrane, change in the electrical resistance of piezoresistors, output voltage and sensitivity of the sensor. The sensitivity of the proposed sensor is 0.145mV/V/kPa.
Ajayakumar C Katageri and B G Sheeparamatti
IEEE
Zinc Oxide thin films are deposited on the glass substrate of different concentration of zinc and their effect on the structural and morphological properties were investigated. Zinc acetate dehydrate, di-ethanolamine and ethanol were used as the precursor, stabilizer and solvent respectively. A molar ratio of 1:1 is maintained between Di-ethanolamine to Zinc acetate. XRD was used to analyze the crystal structure and orientation of the films. The patterns in the XRD show that the ZnO films were polycrystalline with wurtzite hexagonal structure. The ZnO thin film with 0.75M concentration has the better crystalanity as in intrinsic nature a constituent atoms, ions or molecules will be in definite arrangement. The surface morphology of the ZnO thin film was observed by scanning electron microscope (SEM). The SEM images show that they are homogenous, continuous and spindle like shape. Multi walled carbon nanotubes (MWCNT) thin film was deposited on a glass substrate and their effects on structural and morphological properties were investigated. MWCNT was dissolved in Di-Methyl Formamide. Using scanning electron microscope (SEM) surface morphology of MWCNT thin film was observed.
Kirankumar B. Balavalad and B. G. Sheeparamatti
IEEE
The paper, presents the design and analysis of micro piezoresistive pressure sensors using Si, SOI & CNT (Carbon Nanotube) for harsh environment. The sensors were analyzed for the important parameters like sensitivity and temperature sensitivity. Pressure range of 0 to 1MPa, over which the sensors behave linear is considered for analysis. Results reveal that the micro pressure sensor using CNT as piezoresistor has better sensitivity of 308.7mV/MPa (30.8mV/bar), which is better than the sensitivities obtained for silicon & SOI based sensors. CNT is considered as piezoresistor in the design of micro pressure sensor, because of its high gauge factor and an excellent piezoresistive property compared to Si & SOI based sensors. High temperature analysis, depict that CNT & SOI pressure sensors can be used for high temperature applications, with better sensitivity over a linear range.
Ajayakumar C Katageri and B G Sheeparamatti
IEEE
Dimension of piezoresistor and diaphragm, placement of piezoresistors and shape of diaphragm are the factors that enhance the sensitivity of a sensor. Different shapes of diaphragms are compared and analyzed the results using analytical equations. Most normally utilized materials are silicon, silicon dioxide and polysilicon for the piezoresistors and for the diaphragms. Single crystal silicon is used for both piezoresistor and diaphragm. The proposed pressure sensor is analyzed by considering different parameters such as maximum centre deflection of the diaphragm, output voltage across the bridge, and sensitivity of the sensor. Comsol Multiphysics is employed for the simulation of proposed sensor.
M. N. Patil, M. N. Eshwarappa, and B. G. Sheeparamatti
IEEE
This paper presents analysis of electromechanical microcantilever with a feedback circuit. COMSOL/Multiphysics tool is used for design of cantilever and feedback circuit is designed in MATLAB/Simulink software. Cantilever material considered is Silicon. The conventional methods for the measurement of force on a microcantilever are optical or piezoresistive. The method proposed here helps in measuring the force applied on a microcantilever. As the cantilever tip is subjected to some input force it bends. This being is restored to its normal position by electromagnetic force. The required electromagnetic force is directly proportional to the deflection occurred because of actuation. This is a novel method of calculating the force using actuation voltage, which retain microcantilever to its original position.
Manjula Sutagundar, B.G. Sheeparamatti, and D.S. Jangamshetti
IEEE
This paper presents design optimization of MEMS disk resonator using interior point method. Determining the optimized dimensions of disk resonator for a particular resonance frequency and quality factor along with minimum possible motional resistance is attempted. The algorithm is implemented using MATLAB. The results obtained are compared with a fabricated device. The developed method can provide faster design optimization compared to full wave simulators resulting in significant reduction of design time.
Maheshwari S. Biradar, B. G. Sheeparmatti, P. M. Patil, and Sarojini Ganapati Naik
IEEE
In the proposed work regular band method along with distance matching function is carried out for patterned fabric defect detection. Regular band is used to define the regularity of patterned fabric. In this paper we proposed the modified distance matching function which is used to calculate horizontal and vertical periodic distance of repetitive unit in patterned fabrics. This method gives better accuracy than the existing methods for the defects detection such as hole, broken end, thick bar, thin bar, multiple threading and knots.
Rashmi M. Kittali, B. G. Sheeparamatti, and Arshath Sheeparamatti
IEEE
MEMS Sensors are devices capable of collecting the data from the surrounding physical environment and converting it into the useful electrical signals for interpretation and analysis. With the growing complexity in MEMS devices and their need in almost all embedded systems, (e.g., Wireless devices) demands a systematic way for MEMS design, modeling and fabrication. In this paper, modeling and behavioural analysis of MEMS based accelerometer is carried out so as to get the knowledge regarding its working for various inputs. The validation of the results was done by connecting the accelerometer sensor already integrated in the mobile through the Matlab Mobile appliction available in the Google Play store. The model was capable of detecting the acceleration value of up to ±5g. MATLAB/ Simulink tool is used to model and analyse the accelerometer sensor.
Kirankumar B. Balavalad and B. G. Sheeparamatti
IEEE
MEMS sensors are of great demand in the current era as in the recent years the world is turning smarter. MEMS pressure sensors are the most primitive commercialized sensors. Even though the MEMS pressure sensor design and manufacturing started way back in 1960's, there is still an increasing demand in the design and development of these sensors. Silicon is extensively used in the development of pressure sensors. In recent years the application bandwidth of these sensors has become wide. The paradigm of sensor development is now shifting towards the use of materials like SOI SiC, Diamond like Carbon etc., as they can with stand harsh environments involving high pressure & high temperatures. This paper presents design, simulation and analysis of a SOI Micro Piezoresistive Pressure Sensor, which provides better sensitivity at high temperatures compared to silicon piezoresistive pressure sensors. The design of the Si and SOI sensors has be optimally done, which enhances the sensitivity. The designed SOI pressure sensor model provides a sensitivity of 266mV/MPa. The paper also presents the design of the sensors using double Wheatstone bridge pressure measurement mechanism, which further enhances the sensitivity of the SOI sensor to 298mV/MPa over the Silicon only based sensor. Here the double Wheatstone bridge serves as a temperature compensation, providing capability of the sensor to operate with better sensitivity at high temperatures. The sensors are analyzed for parameters like displacement, output voltage, temperature, sensitivity & non-linearity. Overall the designed SOI pressure sensors shows better sensitivities both at normal and high temperature compared to Si pressure sensor.
Shivashankar A. Huddar, B. G. Sheeparamatti, and Ajay Sudhir Bale
IEEE
This paper involves the study of pull-in voltage of a Shape Memory Alloy (SMA) based cantilever beam. The study is carried out by applying electrostatic forces and varying the dimensions. Nitinol which is a SMA is used for the simulation to get required results. An electrostatic force generated by an applied voltage between the top movable micro-cantilever and fixed ground plane bends the micro-cantilever beam towards the ground plane below it. COMSOL Multiphysics is used to simulate the results. The pull-in voltage is found to be 4.5V and when the same model is perforated, the pull-in voltage of micro-cantilever Micro-Electro-Mechanical-System (MEMS) Switch is reduced to 3.20V.
Chandrashekhar S. Janadri, B. G. Sheeparamatti, and Vishwanath Kagawade
IEEE
Every organism emits energy around it which comprises UV-radiation, EM-radiation, infrared and thermal radiation. This energy around human body represents health condition of the subject under study. These energy fields are called as aura of the body under consideration. Several types of equipments are there to capture such energy. Kirlian camera captures the distribution of energy radiation around each finger of both hands and maps them into energy distribution various organs of our body. In this work classification of human diseases based on Kirlian image features is done. Few Kirlian images in each of the 6 different categories of diseased organs of the body are taken and classified based on defected region of the body. The auras are extracted from images using morphological pre-processing, segmentation, shape and texture features extraction followed by training and classification of them using machine learning methods like Multiclass-SVM and ANN. Greater average accuracy of classification is achieved with MSVM-technique. Overall classification accuracy of 13.688% and 80.0655% are achieved in ANN and MSVM-techniques respectively.
Rashmi. S. Jakati, Kirankumar B. Balavalad, and B. G. Sheeparamatti
IEEE
MEMS is the science of miniaturization which creates tiny-integrated devices. The piezoresistive pressure sensors because of its high sensitivity and linearity, ease of fabrication is mostly used in wide variety of applications. To enhance the sensitivity of the conventional piezoresistive pressure, the diaphragm is made perforated. The diaphragm in the non-stress area is made porous to reduce the mass of the device. Mechanical stiffness of the perforated diaphragm when subjected to pressure induces more stress comparatively. The pores of size 40μm×40μm are made in the diaphragm of size 400μm×400μm. The percentage of porous area is varied from 0 to 40% and results are compared. The designed models are simulated using COMSOL Multiphysics. The simulated results reveal that Sensor with 40% perforation is highly sensible to applied pressure and shows extended linearity. The sensitivity of the sensor with 40% perforation achieves 49.6mV/V/MPa where as conventional sensor is 42mV/V/MPa.
Kirankumar B. Balavalad and B. G. Sheeparamatti
IEEE
In this work, we present the design, simulation and analysis of piezoresistive micro pressure sensor operable at pressure range of 0 to 1MPa. Piezoresistors are placed and are connected in the form of Wheatstone Bridge, on the diaphragm. For the design and simulation various aspects like diaphragm dimensions, placement of piezoresistors, dimensions of piezoresistors and different shapes of piezoresistors have been considered to find the best possible configuration for better sensitivity. Simulation and analysis for all the parameters mentioned above has been done using Finite element method based COMSOL Multiphysics. Simulation results show that the sensor design with two-turn meander configuration with the dimensions mentioned in the paper provide better sensitivity 35.54 mV/V/MPa over the pressure range of 0 to 1MPa.
B. G. Sheeparamatti and Veena V. Naik
IEEE
The objective of this work is to model and simulate micro electromagnetic actuator driven by the electric current in the coil. The process of generating a magnetic flux (and hence force) by means of current flowing through the coil can be called as electromagnetic excitation. A cantilever beam kept at the sides of the coil gets deflected because of this force and can act as electromagnetic actuator. The electromagnetic actuator has been modeled and simulated using COMSOL Multiphysics software. Electromagnetic actuators without core and with core are compared. In the electromagnetic actuator with core, displacement increases hundred times more than that of electromagnetic actuator without core. Different materials for cantilever have been considered and it is found that, iron and aluminum are found good for electromagnetic actuation.
Rashmi. S. Jakati, Kirankumar B. Balavalad, and B. G. Sheeparamatti
IEEE
Amongst MEMS technology, pressure measuring technology is one of the most important parameter, which is measure of force per unit area. In this work a comparative analysis of different pressure sensor mechanisms is carried out. Capacitive pressure sensors work on the principle of electrostatic transduction mechanism, piezoresistive pressure sensor employs a change in resistance values of piezoresistive elements placed on the surface of the diaphragm. The piezoelectric pressure sensor works based on piezoelectric effect, where the sensing element is stressed due to the applied pressure, positive electric charge is generated which in turn results to induced voltage. The simulation and modeling of proposed pressure sensors is done using COMSOL Multiphysics. Based on simulation results, capacitive pressure sensor exhibits non-linear response. Piezoresistive pressure sensor provides high linearity and better sensitivity. Piezoelectric pressure sensors achieve high sensitivity but are applicable to only dynamic pressure conditions.
Manjula Sutagundar, Nirosha H., and B.G. Sheeparamatti
IEEE
Modeling and simulation are two important stages in the design and development of MEMS devices. Accurate modeling of the device is very essential for the system level simulation. This paper presents the Artificial Neural Network (ANN) modeling of MEMS cantilever resonator. The geometrical parameters (length, thickness, width and gap) of the cantilever resonator and bias voltage are considered as the input parameters. The resonance frequency, displacement and motional current are taken as the output parameters. The variation of the output parameters with the variation in the input parameters is obtained from the MEMS simulation software Coventorware. Using this data an ANN model is developed for the cantilever resonator. The Levenberg-Marquardt (LM) algorithm is used for training the ANN model.
Shwetha Meti, Kirankumar B. Balavalad, Ajayakumar C. Katageri, and B. G. Sheeparamatti
IEEE
Amongst various transduction principles of pressure sensor, piezoresistive method provides high sensitivity and linear operation over a wide range of pressure. In this paper, piezorestive transduction mechanism is employed for design of a pressure sensor. The diaphragm of the proposed sensor is designed using n-type of Si with copper material used as a connecting arms for the p-type meander shaped piezoresistors placed on the surface of the diaphragm in a Wheatstone bridge configuration at the high strain region of the diaphragm. Meander shape piezoresistors of different length are simulated, in order to find out the best configuration for high sensitivity and linearity. The proposed design is analysed to study the deflection of the diaphragm and output voltage across the bridge. Results reveal that the 50 μm length of piezoresistors is found to have the best sensitivity.
Siddarud Bannikoppa, Ajayakumar C. Katageri, Kirankumar B. Balavalad, and B. G. Sheeparamatti
IEEE
Piezoresistive pressure sensor is a significant transduction mechanism for measuring pressure due to the fact that it is simpler to integrate with electronics, its response is more linear, they are inherently shielded from RF noise and fabrication is easy compared to other transduction mechanism. In this paper, piezoresistive transduction mechanism is employed for design of a pressure sensor. The diaphragm of the proposed sensor is designed using n-type Silicon with p-type Silicon piezoresistors placed on the surface of a diaphragm in a Wheatstone bridge configuration at the most sensitive region of the diaphragm. The proposed design is analyzed to study the deflection of the diaphragm and the output voltage across the bridge. The effect of change in piezoresistor length on the output voltage is also investigated. The results reveal that the proposed sensor provides highest sensitivity for the piezoresistor length of 50um.
Ajayakumar C. Katageri and B. G. Sheeparamatti
IEEE
Use of polymer material in manufacturing of microstructures has been a trend in recent MEMS technology. One such trend is employed in this paper where in four different micro structures are designed and simulated using SU8 polymer material. All the architectures are simulated using COMSOL Multi physics to compute modal frequency. The simulation results are verified analytically using a standard mathematical equations. The simulated architectures are then modelled using neural network to compute the dimensions of a given architecture for a desired modal frequency. Also the simulation results, the analytical results and the ANN results are compared for the various architectures.
Prashant D. Hanasi, B. G. Sheeparamatti, and B. B. Kirankumar
IEEE
Micro cantilevers are the basic MEMS structures, which can be used both as sensors and actuators. The actuation principle of micro cantilever is based on the measurement of change in cantilever position as result of applied stimulus. The objective of this work is to study concept of pull-in voltage and how to reduce the same. The proposed work is carried out by using Comsol/Multiphysics softwere which is based on the finite element method (FEM). The model is developed and simulated by selecting electro mechanics as the physics domain in the Comsol/Multiphysics softwere. Voltage is applied to upper cantilever beam and lower contact electrode is made as ground. By increasing common area between cantilever beam and contact electrode, and also by reducing thickness of the cantilever beam, it is tried to reduce the pull-in voltage. The common area between cantilever beam and contact electrode dimension is increased and the pull-in voltage is reduced from 19.7V to 12.1 V. Similarly the thickness of the cantilever beam is decreased from 1μm to 0.25μm in the steps of 0.25 μm then pull-in voltage is reduced from 57V to 7.2V.
Ajayakumar. C. Katageri, B. G. Sheeparamatti, and Veekshit. B. Math
IEEE
This paper presents a unique design of MEMS based 4-bit shift register that perform shifting operation same as logic devices that are composed of solid-state transistors. The MEMS shift register design inherits all the advantages from MEMS switches and thus is expected to have more applications. One unique feature of this device is that it can perform all types of shifting mechanisms, but with different electrical and mechanical interconnects. The model consists of multiple switches working on the principle of electrostatic actuation. The shift register has 4 stages with each stage having 4 switches and each switch is one bit implementation of a 4 bit shift register. Since the basic logical switching operation is indicated by a mechanical deflection of a cantilever, the proposed system is accurate and reliable.